公开(公告)号：US20090146547A1

公开(公告)日：2009-06-11

申请号：US12180210

申请日：2008-07-25

Applicant: LI QIAN ,  LIANG LIU ,  SHOU-SHAN FAN

Inventor： LI QIAN ,  LIANG LIU ,  SHOU-SHAN FAN

IPC: H01J1/62 ,  H01J9/00

CPC classification number: H01J31/127 ,  H01J1/304 ,  H01J3/021 ,  H01J9/025 ,  H01J2201/30484 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2203/0272

Abstract: A method for manufacturing a field electron emission source includes: providing an insulating substrate; patterning a cathode layer on at least one portion of the insulating substrate; forming a number of emitters on the cathode layer; coating a photoresist layer on the insulating substrate, the cathode layer and the emitters; exposing predetermined portions of the photoresist layer to radiation, wherein the exposed portions are corresponding to the emitters; forming a mesh structure on the photoresist layer; and removing the exposed portions of photoresist layer. The method can be easily performed and the achieved the field electron emission source has a high electron emission efficiency.

Abstract translation: 场致发射源的制造方法包括：提供绝缘基板; 在绝缘基板的至少一部分上构图阴极层; 在阴极层上形成多个发射体; 在绝缘基板，阴极层和发射体上涂覆光致抗蚀剂层; 将光致抗蚀剂层的预定部分暴露于辐射，其中暴露部分对应于发射体; 在光致抗蚀剂层上形成网状结构; 并去除光致抗蚀剂层的暴露部分。 该方法可以容易地进行，并且实现了场电子发射源具有高的电子发射效率。