公开(公告)号：US5674413A

公开(公告)日：1997-10-07

申请号：US562252

申请日：1995-11-22

Applicant: Hans Christian Pfeiffer ,  Werner Stickel

Inventor： Hans Christian Pfeiffer ,  Werner Stickel

IPC: G03F1/20 ,  G03F9/00

CPC classification number: G03F1/20

Abstract: A reticle for an electron beam system for direct writing applications has a base layer that contains a reticle pattern; a set of reinforcing struts connected to the base layer separating the base layer into a set of non-contiguous subfields; in which the pattern is carried by a set of apertures in said base layer; and in which the base thickness is set such that the probability that an electron traversing said base thickness will suffer a collision that removes it from the beam is greater than 90% while the probability that the electron will be absorbed is low; and in which, optionally, selected subfields of the reticle are compensated for errors in the remainder of the system.

Abstract translation: 用于直接写入应用的电子束系统的掩模版具有含有标线图案的基层; 连接到基层的一组加强支柱，将基层分成一组不连续的子场; 其中所述图案由所述基底层中的一组孔承载; 并且其中基底厚度被设定为使得电子穿过所述基底厚度将遭受从光束移除它的碰撞的概率大于90％，而电子被吸收的概率较低; 并且其中可选地，掩模版的选定子场被补偿系统的其余部分中的错误。

公开(公告)号：US5633507A

公开(公告)日：1997-05-27

申请号：US530448

申请日：1995-09-19

Applicant: Hans C. Pfeiffer ,  Werner Stickel

Inventor： Hans C. Pfeiffer ,  Werner Stickel

IPC: H01J37/305 ,  H01J37/30 ,  H01J37/317 ,  H01L21/027

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/083 ,  H01J2237/31788

Abstract: An electron beam system for direct writing applications employs an electron gun having a large emitting surface compared to the prior art and a brightness approximately two orders of magnitude less than prior art systems to illuminate an initial aperture uniformly with a slightly diverging beam that passes efficiently through the aperture, a first set of controllable deflectors to scan the beam over the reticle parallel to the system axis, impressing the pattern of a subfield of the reticle in each exposure, in which a first variable axis lens focuses an image of the initial aperture on the reticle, a second variable axis lens collimates the patterned beam, a second set of controllable deflectors to bring the beam back to an appropriate position above the wafer, and a third variable axis lens to focus an image of the reticle subfield on the wafer, together with correction elements to apply aberration corrections that may vary with each subfield, thereby providing high throughput from the use of parallel processing of the order of 10.sup.7 pixels per subfield with the low aberration feature of the variable axis lens and the ability to tailor location-dependent corrections that are associated with gaussian systems that stitch the image pixel by pixel.

Abstract translation: 用于直接写入应用的电子束系统采用与现有技术相比具有大的发射表面的电子枪，并且比现有技术的系统的亮度大约比现有技术系统稍微发光的光束均匀地照亮初始孔径大约两个数量级，该光束有效地通过 孔，第一组可控偏转器，用于扫描平行于系统轴线的光罩上的光束，在每次曝光中施加掩模版子像的图案，其中第一可变轴透镜将初始光圈的图像聚焦在 所述标线片，第二可变轴透镜对所述图案化光束进行准直，所述第二组可控偏转器将所述光束返回到所述晶片上方的适当位置;以及第三可变轴透镜，用于将所述标线片子场的图像聚焦在所述晶片上， 与校正元件一起应用可以随每个子场变化的像差校正，从而从t提供高通量 他使用具有可变轴透镜的低像差特征的每子场107个像素的并行处理，并且能够定制与高斯系统相关联的位置相关校正，该高斯系统逐像素地编码图像。

公开(公告)号：US5545902A

公开(公告)日：1996-08-13

申请号：US515437

申请日：1995-08-15

Applicant: Hans C. Pfeiffer ,  Werner Stickel

Inventor： Hans C. Pfeiffer ,  Werner Stickel

IPC: G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  H01J37/30

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/30455 ,  H01J2237/31776 ,  H01J2237/31788

Abstract: An electron beam system for direct writing applications combining the parallel throughput of a projection system and the stitching capability of a probe-forming system employs an electron gun to illuminate an initial aperture uniformly, a first set of controllable deflectors to scan the beam over the reticle parallel to the system axis, impressing the pattern of a subfield of the reticle in each exposure, in which a first variable axis lens focuses an image of the initial aperture on the reticle, a second variable axis lens collimates the patterned beam, a second set of controllable deflectors to bring the beam back to an appropriate position above the wafer, and a third variable axis lens to focus an image of the reticle subfield on the wafer, together with correction elements to apply aberration corrections that may vary with each subfield, thereby providing high throughput from the use of parallel processing of the order of 10.sup.7 pixels per subfield with the low aberration feature of the variable axis lens and the ability to tailor location-dependent corrections that are associated with gaussian systems that stitch the image pixel by pixel.