公开(公告)号：US20240006154A1

公开(公告)日：2024-01-04

申请号：US18448077

申请日：2023-08-10

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Shin HIROTSU ,  Takenobu IKEDA ,  Koichi NAGAMI ,  Shinji HIMORI

IPC: H01J37/32 ,  H05H1/00 ,  H01H1/46

CPC classification number: H01J37/32183 ,  H01J37/32715 ,  H01H1/46 ,  H05H1/01 ,  H01J37/32568

Abstract: A plasma processing method according to an exemplary embodiment includes applying a first direct-current voltage to a lower electrode of a substrate support provided in a chamber of a plasma processing apparatus, in a first period during generation of plasma in the chamber. The plasma processing method further includes applying a second direct-current voltage to the lower electrode in a second period different from the first period during generation of plasma in the chamber. The second direct-current voltage has a level different from a level of the first direct-current voltage. The second direct-current voltage has a same polarity as a polarity of the first direct-current voltage.

公开(公告)号：US20200381215A1

公开(公告)日：2020-12-03

申请号：US16878098

申请日：2020-05-19

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Shin HIROTSU ,  Takenobu IKEDA ,  Koichi NAGAMI ,  Shinji HIMORI

IPC: H01J37/32

Abstract: A plasma processing method according to an exemplary embodiment includes applying a first direct-current voltage to a lower electrode of a substrate support provided in a chamber of a plasma processing apparatus, in a first period during generation of plasma in the chamber. The plasma processing method further includes applying a second direct-current voltage to the lower electrode in a second period different from the first period during generation of plasma in the chamber. The second direct-current voltage has a level different from a level of the first direct-current voltage. The second direct-current voltage has a same polarity as a polarity of the first direct-current voltage.

公开(公告)号：US20200312623A1

公开(公告)日：2020-10-01

申请号：US16834612

申请日：2020-03-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki MOYAMA ,  Kazuya NAGASEKI ,  Shinji HIMORI ,  Michishige SAITO ,  Gen TAMAMUSHI

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/67 ,  C23C16/455

Abstract: A substrate processing apparatus includes a processing chamber that accommodates a substrate, a gas supply having a gas diffusion chamber and a plurality of gas holes that communicates the gas diffusion chamber with the processing chamber, a gas inlet tube that introduces a gas into the gas diffusion chamber of the gas supply, and a gas source connected to the gas inlet tube and supplies the gas to the gas inlet tube. The gas supply has a volume variable device for changing a volume in the gas diffusion chamber.

公开(公告)号：US20190164726A1

公开(公告)日：2019-05-30

申请号：US16201659

申请日：2018-11-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Gen TAMAMUSHI ,  Naoyuki SATOH ,  Akihiro YOKOTA ,  Shinji HIMORI

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a processing chamber in which plasma is generated, and a protection target member which is provided in the processing chamber and needs to be protected from consumption by the plasma. The protection target member is made of a material having a property of integrating radicals and/or anions or a protective layer containing the material is provided on a surface of the protection target member.

公开(公告)号：US20130122714A1

公开(公告)日：2013-05-16

申请号：US13737313

申请日：2013-01-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuo MATSUDO ,  Shinji HIMORI ,  Noriaki IMAI ,  Takeshi OHSE ,  Jun ABE ,  Takayuki KATSUNUMA

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

Abstract: A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.