公开(公告)号：US20090286083A1

公开(公告)日：2009-11-19

申请号：US12318687

申请日：2009-01-06

Applicant: Shinichi Kudo ,  Hidenori Abe ,  Hidetoshi Nagayama

Inventor： Shinichi Kudo ,  Hidenori Abe ,  Hidetoshi Nagayama

IPC: B32B15/02 ,  C22C9/00 ,  B22D11/01

CPC classification number: H01B1/026 ,  H01B3/306 ,  Y10T428/294

Abstract: A copper wire for a magnet wire, a magnet wire using same, and a method for fabricating the copper wire for the magnet wire. The copper wire for the magnet wire is made from a casting material. The casting material is fabricated by continuous upward drawing from a molten copper or a molten copper alloy. An average crystal grain diameter of a columnar crystal structure formed at a surface layer of the casting material is 200 to 300 μm. An upward drawing rate is 4 m/min to 5 m/min and a temperature of the molten copper or the molten copper is 1100 to 1200° C.

Abstract translation: 用于电磁线的铜线，使用它的电磁线以及用于制造用于电磁线的铜线的方法。 用于电线的铜线由铸造材料制成。 铸造材料通过从熔融铜或熔融铜合金的连续向上拉拔制造。 在铸造材料的表面层上形成的柱状晶体结构的平均晶粒直径为200〜300μm。 向上拉伸速度为4m / min〜5m / min，熔融铜或熔融铜的温度为1100〜1200℃。

公开(公告)号：US20080051418A1

公开(公告)日：2008-02-28

申请号：US11791374

申请日：2005-11-25

Applicant: Tsuyoshi Maekawa ,  Osamu Ujikawa ,  Hidenori Abe ,  Izumi Nomura

Inventor： Tsuyoshi Maekawa ,  Osamu Ujikawa ,  Hidenori Abe ,  Izumi Nomura

IPC: A61K31/501 ,  A61K31/415 ,  A61K31/422 ,  A61K31/427 ,  A61P3/06 ,  C07D213/00 ,  C07D263/02 ,  C07D401/02 ,  C07D413/02 ,  C07D417/02 ,  C07D401/14 ,  C07D277/02 ,  C07D231/12 ,  A61P3/10 ,  A61K31/44 ,  A61K31/4439 ,  A61K31/4709

CPC classification number: C07D401/06 ,  C07D213/30 ,  C07D213/50 ,  C07D213/64 ,  C07D213/69 ,  C07D231/20 ,  C07D231/22 ,  C07D277/20 ,  C07D277/56

Abstract: A compound represented by the formula (I): wherein Ar is an optionally substituted aromatic ring; Xa, Xc, Ya, Yc, Z1 and Z2 are each a bond, O, S, —CO—, —CS—, —CR3(OR4)—, —NR5—, —SO—, —SO2—, —CONR6— or —NR6CO— (wherein R3, R4, R5 and R6 are as defined in the specification); Xb and Yb are each a bond or a divalent hydrocarbon group having 1 to 20 carbon atoms; R1 is an optionally substituted hydrocarbon group; ring A is an optionally further substituted aromatic ring, provided that the ring should not be benzimidazole; n is an integer of 1 to 8; ring B is an optionally further substituted aromatic ring, provided that the ring should not be oxazole; W is a divalent saturated hydrocarbon group having 1 to 20 carbon atoms; and R2 is —OR8 or —NR9R10 (wherein R8, R9 and R10 are as defined in the specification) or a salt thereof, is useful as an agent for the prophylaxis or treatment of diabetes and the like.

Abstract translation: 由式（I）表示的化合物：其中Ar为任选取代的芳环; Xa，Xc，Ya，Yc，Z 1和Z 2各自为键，O，S，-CO-，-CS-，-CR 3 （OR 4） - ， - -NR 5 - ， - SO - ， - SO 2 - ， - CONR 6 - 或-NR 6 CO-（其中R 3，R 4，R 4，R 5， 和R 6如说明书中所定义）; Xb和Yb各自为键或碳原子数为1〜20的二价烃基; R 1是任选取代的烃基; 环A是任选进一步取代的芳环，条件是该环不应为苯并咪唑; n为1〜8的整数， 环B是任选进一步取代的芳环，条件是该环不应为恶唑; W是碳原子数为1〜20的二价饱和烃基; 和R 2是-OR 8或-NR 9 R 10（其中R 8） 其中R 9，R 9和R 10如说明书中所定义）或其盐可用作预防或治疗糖尿病等的药剂。

公开(公告)号：US06709776B2

公开(公告)日：2004-03-23

申请号：US09842805

申请日：2001-04-27

Applicant: Takao Noguchi ,  Yoshihiko Yano ,  Hisatoshi Saitou ,  Hidenori Abe

Inventor： Takao Noguchi ,  Yoshihiko Yano ,  Hisatoshi Saitou ,  Hidenori Abe

IPC: B32B900

CPC classification number: C30B23/02 ,  C30B25/02 ,  C30B29/22 ,  Y10T428/2495

Abstract: The invention has for its objects to provide a multilayer thin film comprising a ferroelectric thin film preferentially (001) oriented on an Si substrate, its fabrication process, and an electron device. To attain these object, the invention provides a multilayer thin film formed on a substrate by epitaxial growth, which comprises a buffer layer comprising an oxide and a ferroelectric thin film, with a metal thin film and an oxide thin film formed in this order between the buffer layer and the ferroelectric thin film, its fabrication process, and an electron device.

Abstract translation: 本发明的目的是提供一种多层薄膜，其包括在Si衬底上取向的优先（001）铁电薄膜，其制造工艺和电子器件。 为了实现这些目的，本发明提供了一种通过外延生长在基板上形成的多层薄膜，其包括由氧化物和铁电薄膜构成的缓冲层，金属薄膜和氧化物薄膜之间依次形成 缓冲层和铁电薄膜，其制造工艺和电子器件。

公开(公告)号：US06372351B1

公开(公告)日：2002-04-16

申请号：US09549708

申请日：2000-04-14

Applicant: Keizo Takemiya ,  Hidenori Abe

Inventor： Keizo Takemiya ,  Hidenori Abe

IPC: B32B2738

CPC classification number: H01L23/293 ,  C08K3/04 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/45144 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3025 ,  Y10T428/12528 ,  Y10T428/31522 ,  C08L63/00 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: In the present invention, provided are i) an encapsulant epoxy resin composition comprising an epoxy resin, a curing agent, a non-conductive carbon and an inorganic filler, and ii) an electronic device having an encapsulating member comprising a cured product of this composition.

Abstract translation: 在本发明中，提供了i）包含环氧树脂，固化剂，非导电性碳和无机填料的密封剂环氧树脂组合物，和ii）具有包含该组合物的固化产物的封装构件的电子器件 。

公开(公告)号：US06198208B1

公开(公告)日：2001-03-06

申请号：US09558586

申请日：2000-04-26

Applicant: Yoshihiko Yano ,  Takao Noguchi ,  Hidenori Abe ,  Hisatoshi Saitou

Inventor： Yoshihiko Yano ,  Takao Noguchi ,  Hidenori Abe ,  Hisatoshi Saitou

IPC: H01L4104

CPC classification number: H03H9/176 ,  H01L41/1876 ,  H01L41/316 ,  H03H3/04 ,  H03H9/0211 ,  H03H9/174 ,  Y10T428/3171

Abstract: A thin film piezoelectric device has an epitaxial metal thin film (4) on a silicon substrate (2) and a PZT thin film (5) on the metal thin film, the PZT thin film (5) having a Ti/(Ti+Zr) atomic ratio between 0.65 and 0.90. A film bulk acoustic resonator having an extremely broad band is realized.

Abstract translation: 薄膜压电元件在金属薄膜上的硅衬底（2）和PZT薄膜（5）上具有外延金属薄膜（4），PZT薄膜（5）具有Ti /（Ti + Zr ）原子比在0.65和0.90之间。 实现了具有极宽带的薄膜体声波谐振器。