公开(公告)号：US12154784B2

公开(公告)日：2024-11-26

申请号：US17720033

申请日：2022-04-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yang Hung ,  Huan-Just Lin ,  Sheng-Liang Pan ,  Yungtzu Chen ,  Po-Chuan Wang ,  Guan-Xuan Chen

IPC: H01L21/02 ,  H01L21/8234

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are described herein. A method includes forming a first opening through a dielectric layer, the first opening exposing a conductive region. A wet cleaning is used after the forming the first opening, and the first opening is treated after the wet cleaning the first opening, the treating the first opening comprising turning a sidewall treatment precursor and a bottom treatment precursor into a first plasma mixture, the sidewall treatment precursor being different from the bottom treatment precursor. The first opening is filled with a conductive material after the treating the first opening.

公开(公告)号：US20190267211A1

公开(公告)日：2019-08-29

申请号：US16177530

申请日：2018-11-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Liang Pan ,  Bing-Hung Chen ,  Chia-Yang Hung ,  Jyu-Horng Shieh ,  Shu-Huei Suen ,  Syun-Ming Jang ,  Jack Kuo-Ping Kuo

IPC: H01J37/32 ,  H01L21/02

Abstract: Embodiments described herein relate to plasma processes. A tool includes a pedestal. The pedestal is configured to support a semiconductor substrate. The tool includes a bias source. The bias source is electrically coupled to the pedestal. The bias source is operable to bias the pedestal with a direct current (DC) voltage. The tool includes a plasma generator. The plasma generator is operable to generate a plasma remote from the pedestal. A method for semiconductor processing includes performing a plasma process on a substrate in a tool. The plasma process includes flowing a gas into the tool. The plasma process includes biasing a pedestal that supports the substrate in the tool. The plasma process includes igniting a plasma in the tool using the gas.