公开(公告)号：US20200273747A1

公开(公告)日：2020-08-27

申请号：US16711845

申请日：2019-12-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min RYU ,  Younsoo KIM ,  Gyu-hee PARK ,  Jaesoon LIM ,  Younjoung CHO

IPC: H01L21/768 ,  H01L21/285 ,  H01L27/108 ,  H01L21/8238

Abstract: A method of manufacturing a semiconductor device, the method including providing a metal precursor on a substrate to form a preliminary layer that includes a first metal; providing a reducing agent on the preliminary layer, the reducing agent including a compound that includes a second metal; and providing a reactant on the preliminary layer to form a metal-containing layer, wherein the second metal has multiple oxidation states, the second metal in the reducing agent having a lower oxidation state among the multiple oxidation states prior to providing the reducing agent on the preliminary layer.

公开(公告)号：US20200231610A1

公开(公告)日：2020-07-23

申请号：US16554926

申请日：2019-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-Min RYU ,  Myong Woon KIM ,  Younsoo KIM ,  Sang Ick LEE ,  Jaesoon LIM ,  Younjoung CHO ,  Jun Hee CHO ,  Won Mook CHAE

IPC: C07F7/22 ,  C23C16/40 ,  C23C16/448 ,  H01L21/02 ,  H01L21/285

Abstract: A tin compound, a tin precursor compound for forming a tin-containing layer, and a method of forming a thin layer, the tin compound being represented by Formula 1: wherein R1, R2, R3, R4, R5, R6, and R7 are each independently hydrogen, a linear alkyl group having 1 to 4 carbon atoms, or a branched alkyl group having 3 or 4 carbon atoms.

公开(公告)号：US20190304770A1

公开(公告)日：2019-10-03

申请号：US16155976

申请日：2018-10-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-Hee PARK ,  Yangsun PARK ,  Jaesoon LIM ,  Younjoung CHO

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/762 ,  C23C16/455 ,  C23C16/08 ,  C23C16/20

Abstract: A method of fabricating a semiconductor device, the method including forming semiconductor patterns on a substrate such that the semiconductor patterns are vertically spaced apart from each other; and forming a metal work function pattern to fill a space between the semiconductor patterns, wherein forming the metal work function pattern includes performing an atomic layer deposition (ALD) process to form an alloy layer, and the ALD process includes providing a first precursor containing an organoaluminum compound on the substrate, and providing a second precursor containing a vanadium-halogen compound on the substrate.