公开(公告)号：US20220406974A1

公开(公告)日：2022-12-22

申请号：US17846143

申请日：2022-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seon-Yeong KIM ,  Yong Wook KIM ,  Soo Kyung KWON ,  Ji-Yeong KIM ,  Sungwoo HWANG

IPC: H01L33/50 ,  C01G9/00 ,  C30B33/06

Abstract: Nanostructures including a first semiconductor nanocrystal including zinc and selenium, and a second semiconductor nanocrystal including a zinc chalcogenide, wherein a composition of the second semiconductor nanocrystal is different from a composition of the first semiconductor nanocrystal, wherein the nanostructures further include tellurium, wherein in the nanostructures, a mole ratio of selenium to tellurium is greater than or equal to about 0.83:1 and less than or equal to about 10:1, wherein a derivative thermogravimetry curve of the nanostructures has an extreme value in a temperature range of greater than or equal to about 250° C. and less than or equal to about 420° C.

公开(公告)号：US20220119708A1

公开(公告)日：2022-04-21

申请号：US17503436

申请日：2021-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seon-Yeong KIM ,  Yong Wook KIM ,  Soo Kyung KWON ,  Ji-Yeong KIM ,  Sungwoo HWANG

IPC: C09K11/88 ,  H01L51/50 ,  C01B19/04 ,  C09K11/70 ,  C01G9/00

Abstract: A cadmium free quantum dot or a population thereof or a device including the same, wherein the cadmium free quantum dot includes a core (or a semiconductor nanocrystal particle) including a first semiconductor including a Group IIB-VI compound and a shell (or a coating) disposed on the core (or the semiconductor nanocrystal particle) including a Group IIB-V compound and exhibits a quantum efficiency of about 60% or higher.

公开(公告)号：US20210115332A1

公开(公告)日：2021-04-22

申请号：US17072335

申请日：2020-10-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seon-Yeong KIM ,  Soo Kyung KWON ,  Yong Wook KIM ,  Ji-Yeong KIM ,  Jihyun MIN ,  Sungwoo HWANG ,  Eun Joo JANG

IPC: C09K11/88 ,  C09K11/54 ,  C09K11/56 ,  C09K11/06 ,  C01G9/00 ,  C01G9/08 ,  H01L27/32 ,  G02F1/13357

Abstract: A core-shell quantum dot including a core including a first semiconductor nanocrystal, the first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc and selenium, sulfur, or a combination thereof and a production thereof are disclosed, wherein the core-shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein the core-shell quantum dot(s) includes chlorine, wherein in the core-shell quantum dot, a mole ratio of chlorine with respect to tellurium is greater than or equal to about 0.01:1 and wherein a quantum efficiency of the core-shell quantum dot is greater than or equal to about 10%.

公开(公告)号：US20200332186A1

公开(公告)日：2020-10-22

申请号：US16851509

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Yeong KIM ,  Soo Kyung KWON ,  Seon-Yeong KIM ,  Yong Wook KIM ,  Eun Joo JANG

IPC: C09K11/54 ,  C09K11/88 ,  C09K11/64 ,  C09K11/58 ,  C09K11/57 ,  C09K11/02

Abstract: A core-shell quantum dot comprising zinc, a core comprising a first semiconductor nanocrystal material; and a semiconductor nanocrystal shell disposed on the core, wherein the core-shell quantum dot does not comprise cadmium, and does comprise zinc, tellurium, selenium, and aluminum.