公开(公告)号：USD816649S1

公开(公告)日：2018-05-01

申请号：US29597811

申请日：2017-03-20

Applicant: Samsung Electronics Co., Ltd.

Designer： Sanghoon Song ,  Youn-Gun Jung ,  Yoonyoung Choi ,  Junyoung Lee

公开(公告)号：USD812585S1

公开(公告)日：2018-03-13

申请号：US29598686

申请日：2017-03-28

Applicant: Samsung Electronics Co., Ltd.

Designer： Sanghoon Song ,  Youn-Gun Jung ,  Yoonyoung Choi ,  Junyoung Lee

公开(公告)号：US20250022927A1

公开(公告)日：2025-01-16

申请号：US18738877

申请日：2024-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  FOUNDATION OF SOONGSIL UNIVERSITY-INDUSTRY COOPERATION

Inventor： Youngtek OH ,  Geonwook Yoo ,  Kyungwook Hwang ,  Changkun Park ,  Sanghoon Song ,  Minjae Yeom ,  Gyuhyung Lee ,  Junsik Hwang

IPC: H01L29/417 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778 ,  H01L33/00

Abstract: A semiconductor device includes a channel layer including a first group III-V semiconductor material; a barrier layer provided on an upper surface of the channel layer, the barrier layer including a second group III-V semiconductor material that is different than the first group III-V semiconductor material; a plurality of sources/drains spaced apart from each other on an upper surface of the barrier layer; a gate insulating layer covering the upper surface of the barrier layer and upper surfaces of the plurality of sources/drains; a gate provided on an upper surface of the gate insulating layer, the gate not overlapping the plurality of sources/drains; a plurality of source/drain electrodes electrically connected to corresponding sources/drains among the plurality of sources/drains; and a gate electrode electrically connected to the gate, wherein the plurality of source/drain electrodes has a diagonally symmetrical arrangement.

公开(公告)号：US11898244B2

公开(公告)日：2024-02-13

申请号：US17497523

申请日：2021-10-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jooho Lee ,  Yongsung Kim ,  Sanghoon Song ,  Wooyoung Yang ,  Changseung Lee ,  Sungjin Lim ,  Junsik Hwang

IPC: C23C16/34 ,  C23C16/50 ,  C23C16/06 ,  C23C16/44 ,  H01M4/04 ,  H01M10/052 ,  H01J37/32 ,  H01M16/00 ,  C23C16/00

CPC classification number: C23C16/34 ,  C23C16/00 ,  C23C16/06 ,  C23C16/4408 ,  C23C16/50 ,  H01J37/32 ,  H01J37/3244 ,  H01M4/0428 ,  H01M10/052 ,  H01M16/00 ,  H01J2237/3321 ,  H01M2220/30 ,  H01M2300/0068

Abstract: A method of forming a lithium (Li)-based film, may include: supplying a Li source material into a reaction chamber in which a substrate is disposed; supplying phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber; and generating plasma in the reaction chamber to form a Li-based film on the substrate from the Li, P, O, and N source materials, wherein the supplying of the Li source material into the reaction chamber and the supplying of the P and O source materials and the N source material into the reaction chamber are performed with a time interval, and wherein the Li source material supplied into the reaction chamber is deposited on the substrate, and the P and O source materials supplied into the reaction chamber are adsorbed on the Li source material.

公开(公告)号：USD855031S1

公开(公告)日：2019-07-30

申请号：US29623848

申请日：2017-10-27

Applicant: Samsung Electronics Co., Ltd.

Designer： Youngjun Cho ,  Sanghoon Song ,  Junyoung Lee ,  Munhee Jang ,  Youn-Gun Jung ,  Yoonyoung Choi

公开(公告)号：USD850402S1

公开(公告)日：2019-06-04

申请号：US29671416

申请日：2018-11-27

Applicant: Samsung Electronics Co., Ltd.

Designer： Youngjun Cho ,  Sanghoon Song ,  Junyoung Lee ,  Munhee Jang ,  Youn-Gun Jung ,  Yoonyoung Choi

公开(公告)号：USD840964S1

公开(公告)日：2019-02-19

申请号：US29644883

申请日：2018-04-20

Applicant: Samsung Electronics Co., Ltd.

Designer： Sanghoon Song ,  Youn-Gun Jung ,  Yoonyoung Choi ,  Junyoung Lee

公开(公告)号：USD840963S1

公开(公告)日：2019-02-19

申请号：US29640969

申请日：2018-03-19

Applicant: Samsung Electronics Co., Ltd.

Designer： Sanghoon Song ,  Youn-Gun Jung ,  Yoonyoung Choi ,  Junyoung Lee

公开(公告)号：USD815056S1

公开(公告)日：2018-04-10

申请号：US29598684

申请日：2017-03-28

Applicant: Samsung Electronics Co., Ltd.

Designer： Sanghoon Song ,  Youn-Gun Jung ,  Yoonyoung Choi ,  Junyoung Lee

公开(公告)号：US20250022863A1

公开(公告)日：2025-01-16

申请号：US18597506

申请日：2024-03-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook HWANG ,  Junsik Hwang ,  Sanghoon Song ,  Joonyong Park

IPC: H01L25/16 ,  H01L23/544 ,  H01L33/38 ,  H01L33/62

Abstract: A display device and a method of manufacturing the display device are provided. The display device includes a display substrate including a driving circuit; an array layer provided on the display substrate and including a plurality of grooves; a micro-semiconductor chip provided in a groove of the plurality of grooves, the micro-semiconductor chip including: an n-type semiconductor layer; an active layer provided on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; and a first electrode provided on the p-type semiconductor layer; and a second electrode connected to the n-type semiconductor layer from a lower surface of the display substrate; a first wiring connected to the first electrode; and a second wiring connected to the second electrode.