公开(公告)号：US20240234135A1

公开(公告)日：2024-07-11

申请号：US18429845

申请日：2024-02-01

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  iBeam Materials, Inc.

Inventor： Junhee CHOI ,  Vladmir MATIAS ,  Joohun HAN

IPC: H01L21/02

CPC classification number: H01L21/02502 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02496 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02516 ,  H01L21/02598 ,  H01L21/02192 ,  H01L21/02266 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02631

Abstract: A single crystal semiconductor includes a strain compensation layer; an amorphous substrate disposed on the strain compensation layer; a lattice matching layer disposed on the amorphous substrate and including two or more single crystal layers; and a single crystal semiconductor layer disposed on the lattice matching layer, the lattice matching layer including a direction control film disposed on the amorphous substrate and including a single crystal structure, and a buffer layer including a material different from that of the direction control film, the buffer layer being disposed on the direction control film and including a single crystal structure.

公开(公告)号：US20230402569A1

公开(公告)日：2023-12-14

申请号：US18238390

申请日：2023-08-25

Applicant: Samsung Electronics Co., LTD.

Inventor： Junhee CHOI ,  Nakhyun Kim ,  Jinjoo Park ,  Joohun Han

IPC: H01L33/24 ,  H01L27/15 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40

CPC classification number: H01L33/24 ,  H01L27/156 ,  H01L33/0025 ,  H01L33/0062 ,  H01L33/06 ,  H01L33/145 ,  H01L33/30 ,  H01L33/40

Abstract: Provided is a nanorod light-emitting device including a first semiconductor layer doped with a first conductive type impurity, an emission layer disposed above the first semiconductor layer, a second semiconductor layer disposed above the emission layer and doped with a second conductive type impurity that is electrically opposite to the first conductive type impurity, a conductive layer disposed between at least one of a center portion of a lower surface of the emission layer and the first semiconductor layer and a center portion of an upper surface of the emission layer and the second semiconductor layer, and a current blocking layer surrounding a sidewall of the conductive layer.

公开(公告)号：US20230317768A1

公开(公告)日：2023-10-05

申请号：US18308895

申请日：2023-04-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joohun HAN ,  Junhee CHOI ,  Kiho KONG ,  Jinjoo PARK ,  Nakhyun KIM ,  Junghun PARK

IPC: H01L27/15 ,  H01L33/00

CPC classification number: H01L27/156 ,  H01L33/0093 ,  H01L33/0095 ,  H01L33/007

Abstract: A micro light emitting diode (LED) device and a method of manufacturing the same are provided. A micro LED device includes a light emitting layer that is provided on a support substrate, a bonding layer, and a driver layer. The light emitting layer includes a stacked structure including a first semiconductor layer, an active layer, and a second semiconductor layer; first and second electrodes provided on a first side and a second side of the stacked structure; and a plurality of light emitting regions. The bonding layer is positioned between the support substrate and the light emitting layer. The drive layer includes a drive element electrically connected to the light emitting layer and is positioned on the light emitting layer to apply power to the plurality of light emitting regions of the light emitting layer.

公开(公告)号：US20220278167A1

公开(公告)日：2022-09-01

申请号：US17744211

申请日：2022-05-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiho KONG ,  Junhee CHOI

IPC: H01L27/15 ,  H01L27/12 ,  H01L49/02 ,  H01L33/36 ,  H01L33/62

Abstract: A display apparatus includes a substrate, a light-emitting device provided on the substrate, a driving transistor device configured to control the light-emitting device, a first power supply line electrically connected to a source region of the driving transistor device, a conductive pattern electrically connected to a gate electrode of the driving transistor device, and a second power supply line electrically connected to the first power supply line, wherein the conductive pattern and the first power supply line constitute a first capacitor, and the conductive pattern and the second power supply line constitute a second capacitor, wherein the first capacitor and the second capacitor are connected in parallel.

公开(公告)号：US20220246092A1

公开(公告)日：2022-08-04

申请号：US17725935

申请日：2022-04-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee CHOI ,  Kiho KONG ,  Nakhyun KIM ,  Junghun PARK ,  Jinjoo PARK ,  Joohun HAN

IPC: G09G3/32 ,  H01L27/15 ,  H01L33/10 ,  H01L33/34

Abstract: Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.

公开(公告)号：US20220109022A1

公开(公告)日：2022-04-07

申请号：US17227981

申请日：2021-04-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee CHOI ,  Kiho KONG ,  Nakhyun KIM ,  Dongho KIM ,  Junghun PARK ,  Jinjoo PARK ,  Eunsung LEE ,  Joohun HAN

IPC: H01L27/15

Abstract: A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.

公开(公告)号：US20210375983A1

公开(公告)日：2021-12-02

申请号：US17400354

申请日：2021-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee CHOI ,  Sungjin Kang ,  Kiho Kong ,  Junghun Park ,  Jinjoo Park ,  Joohun Han ,  Kyungwook Hwang

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/14 ,  H01L33/22 ,  H01L33/40 ,  H01L33/42 ,  H01L33/50 ,  H01L33/60

Abstract: Provided are a display apparatus and a method of manufacturing the same. The display apparatus includes a support substrate, a driving layer provided on the support substrate and including a driving element configured to apply power to a pixel electrode, and a light-emitting layer provided on the driving layer.

公开(公告)号：US20210091279A1

公开(公告)日：2021-03-25

申请号：US16842933

申请日：2020-04-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiho KONG ,  Junhee CHOI ,  Jinjoo PARK ,  Joohun HAN

IPC: H01L33/62 ,  H01L33/38 ,  H01L27/15

Abstract: A semiconductor device includes a substrate including a first region and a second region that are arranged in a first direction that is parallel to an upper surface of the substrate; a separation layer provided on the first region of the substrate; a high electron mobility transistor (HEMT) device overlapping the separation layer in a second direction that is perpendicular to the upper surface of the substrate; a light-emitting device provided on the second region of the substrate; and a first insulating pattern covering a side surface of the HEMT device, wherein the first insulating pattern overlaps the separation layer in the second direction.

公开(公告)号：US20210091257A1

公开(公告)日：2021-03-25

申请号：US16822673

申请日：2020-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook HWANG ,  Sungjin KANG ,  Junsik HWANG ,  Junhee CHOI

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/50 ,  H01L25/075

Abstract: Provided is a display device including a substrate, a transfer guiding mold provided on the substrate and including a plurality of openings, and a plurality of micro light emitting diodes (LEDs) provided on the substrate in the plurality of openings, wherein a height of the transfer guiding mold is less than twice a height of each of the plurality of micro LEDs.

公开(公告)号：US20250107286A1

公开(公告)日：2025-03-27

申请号：US18890232

申请日：2024-09-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joohun HAN ,  Junhee CHOI ,  Nakhyun KIM ,  Joosung KIM ,  Taegon KIM

IPC: H01L33/46 ,  H01L25/075 ,  H01L25/16 ,  H01L33/02 ,  H01L33/06

Abstract: A light emitting device includes a semiconductor light emitting structure including, a first semiconductor layer including a plurality of pores, a light emitting layer provided on the first semiconductor layer, and a second semiconductor layer provided on the light emitting layer, a plurality of quantum dots provided in the plurality of pores, and an external passivation layer at least partially surrounding a sidewall of the semiconductor light emitting structure, where the plurality of quantum dots are provided between the plurality of pores and the external passivation layer.