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公开(公告)号:US10541670B2
公开(公告)日:2020-01-21
申请号:US15870546
申请日:2018-01-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yongseop Yoon , Sungchan Kang , Cheheung Kim , Sangha Park , Choongho Rhee , Hyeokki Hong
Abstract: Provided are micromechanical resonators and resonator systems including the micromechanical resonators. The micromechanical resonators may each include a supporting beam including a fixed end fixed on a supporting member and a loose end configured to vibrate, and a lumped mass arranged on the loose end, wherein the loose end has a width greater than a width of the fixed end, and a width of the lumped mass is greater than that the width of the fixed end.
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公开(公告)号:US12099131B2
公开(公告)日:2024-09-24
申请号:US17834176
申请日:2022-06-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Daehyuk Son , Cheheung Kim , Jaehyung Jang , Hyeokki Hong
CPC classification number: G01S3/8038 , H04R1/406 , H04R3/005 , H04R2201/401 , H04R2430/21
Abstract: Provided is a direction estimating apparatus using an acoustic sensor, the direction estimating apparatus including a non-directional acoustic sensor, a plurality of directional acoustic sensors provided adjacent to the non-directional acoustic sensor, and a processor configured to obtain a first output signal from the non-directional acoustic sensor and a plurality of second output signals from the plurality of directional acoustic sensors, and estimate a direction of a sound source within an error range from −5 degrees to +5 degrees by comparing magnitudes between the two output signals and phase information between the first output signal and one of the second output signals.
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公开(公告)号:US11632623B2
公开(公告)日:2023-04-18
申请号:US17717968
申请日:2022-04-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Cheheung Kim , Sungchan Kang , Hyeokki Hong , Hyunwook Kang , Yongseop Yoon , Choongho Rhee
Abstract: A compact directional acoustic sensor having an improved signal-to-noise ratio is disclosed. The disclosed directional acoustic sensor includes a first sensing device configured to generate different output gains based on different input directions of external energy, and configured to generate at least one first output signal having a first polarity based on external energy received from an input direction; a second sensing device configured to generate different output gains based on different input directions of external energy, and configured to generate at least one second output signal having a second polarity, that is different than the first polarity, based on the external energy received from the input direction; and at least one signal processor configured to generate at least one final output signal based on the at least one first output signal and the at least one second output signal.
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公开(公告)号:US20220103917A1
公开(公告)日:2022-03-31
申请号:US17193720
申请日:2021-03-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyeokki Hong , Hyunwook Kang , Sungchan Kang , Cheheung Kim
Abstract: A multi-function acoustic sensor may include a plate structure having a plurality of open spaces that are spaced apart from each other; a plurality of sensors provided on the plate structure, the plurality of sensors including a plurality of sensor elements respectively provided to overlap the plurality of open spaces; and a case having an inner space in which the plurality of sensors are provided, the case including: a first case surface on which the plurality of sensors are provided, the first case surface having at least one first hole, and a second case surface opposite to the first case surface, the second case surface having at least one second hole, wherein the at least one first hole and the at least one second hole form at least one path along which sound is transmitted and sensed through at least one of the plurality of open spaces of the plate structure.
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公开(公告)号:US11199865B2
公开(公告)日:2021-12-14
申请号:US16887002
申请日:2020-05-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyunwook Kang , Cheheung Kim , Hyeokki Hong , Sungchan Kang , Yongseop Yoon , Choongho Rhee
Abstract: A bandgap reference voltage generating circuit includes a first current generator generating a first complementary-to-absolute temperature (CTAT) current and a first proportional-to-absolute temperature (PTAT) current, a second current generator generating a second CTAT current and a second PTAT current, and an output circuit outputting a reference voltage based on a difference between a first voltage based on the first CTAT current and the first PTAT current and a second voltage based on the second CTAT current and the second PTAT current, wherein the first CTAT current is cancelled by the second CTAT current.
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公开(公告)号:US11094329B2
公开(公告)日:2021-08-17
申请号:US16134529
申请日:2018-09-18
Inventor: Sangha Park , Namsoo Kim , Hyungyong Kim , Sungchan Kang , Cheheung Kim , Yongseop Yoon , Choongho Rhee , Hyeokki Hong
IPC: G10L17/00 , G10L17/18 , G06N3/08 , G10L17/06 , G06N3/04 , G10L25/30 , G10L17/02 , G10L17/04 , G10L15/16 , G10L15/02 , G10L15/06
Abstract: Provided are a neural network device and a method of operation thereof. The neural network device for speaker recognition may include: a memory configured to store one or more instructions; and a processor configured to generate a trained second neural network by training a first neural network, for separating a mixed voice signal into individual voice signals by executing the one or more instructions, generate a second neural network by adding at least one layer to the trained first neural network, and generate a trained second neural network by training the second neural network, for separating the mixed voice signal into the individual voice signals and for recognizing a speaker of each of the individual voice signals.
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公开(公告)号:US11039262B2
公开(公告)日:2021-06-15
申请号:US16162795
申请日:2018-10-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Cheheung Kim , Sungchan Kang , Yongseop Yoon , Choongho Rhee , Sangha Park , Hyeokki Hong
IPC: H04R17/02 , H04S7/00 , H04R5/04 , G10L21/0216 , H04R1/32 , B60K35/00 , G06F3/16 , H04R1/40 , H04R1/24
Abstract: Provided are a directional acoustic sensor that detects a direction of sound, a method of detecting a direction of sound, and an electronic device including the directional acoustic sensor. The directional acoustic sensor includes a sound inlet through which a sound is received, a sound outlet through which the sound received through the sound inlet is output, and a plurality of vibration bodies arranged between the sound inlet and the sound outlet, in which one or more of the plurality of vibration bodies selectively react to the sound received by the sound inlet according to a direction of the received sound.
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公开(公告)号:US11038480B2
公开(公告)日:2021-06-15
申请号:US16791728
申请日:2020-02-14
Inventor: Hyeokki Hong , Ji-Hun Lee , Gyu-Hyeong Cho , Cheheung Kim , Hyunwook Kang
Abstract: An amplifier includes: a first input transistor connected to a first input, a first output, and a power source or a ground, a second input transistor connected to a second input, a second output, and the power source or the ground; a first replica transistor connected to the first input, a detection node, and the power source or the ground; a second replica transistor connected to the second input, the detection node, and the power source or the ground; and a bias transistor connected to a bias voltage, the detection node, and the power source or the ground.
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公开(公告)号:US10916436B2
公开(公告)日:2021-02-09
申请号:US16696513
申请日:2019-11-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Choongho Rhee , Sungchan Kang , Hyunwook Kang , Cheheung Kim , Yongseop Yoon , Jaehyung Jang , Hyeokki Hong
IPC: H01L21/306 , H01L21/3065 , H01L21/56 , H01L21/683 , H01L21/02 , H01L21/311 , H01L21/3213
Abstract: Provided is a plasma dicing method. The plasma dicing method includes: performing plasma etching on a first surface of a substrate exposed between a plurality of membrane structures; forming a passivation layer on a semiconductor wafer to cover the plurality of membrane structures and at least one trench; performing plasma etching on a second surface of the substrate such that a through hole exposing a portion of the plurality of membrane structures and a dicing lane connected to the trench and having a width less than a width of the through hole are formed at the substrate; and removing the passivation layer and singulating the semiconductor wafer into a plurality of devices including a membrane partially exposed by the through hole.
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公开(公告)号:US20200158564A1
公开(公告)日:2020-05-21
申请号:US16398449
申请日:2019-04-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yongseop Yoon , Sungchan Kang , Cheheung Kim , Choongho Rhee , Hyeokki Hong
IPC: G01H11/08 , H01L41/113 , H01L41/25
Abstract: Provided are resonators, a resonator system including the resonators, and a method of manufacturing the resonators. The resonator includes a vibration beam configured to vibrate in response to an external signal, a sensing unit configured to detect the movement of the vibration beam, and a lumped mass unit including a base unit that contacts the vibration beam and a wing unit arranged separately from the vibration beam on the base unit.
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