公开(公告)号：US20180286915A1

公开(公告)日：2018-10-04

申请号：US15788933

申请日：2017-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Hye YEON ,  Han Kyu SEONG ,  Wan Tae LIM ,  Sung Hyun SIM ,  Hanul YOO

IPC: H01L27/15 ,  H01L33/22 ,  H01L33/00 ,  H01L33/38 ,  H01L33/50 ,  H01L33/62

CPC classification number: H01L27/153 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44 ,  H01L33/507 ,  H01L33/62

Abstract: A semiconductor light emitting device includes a plurality of light emitting cells including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first and second conductivity type semiconductor layers, an insulating layer on the plurality of light emitting cells and having a first opening and a second opening defining a first contact region of the first conductivity type semiconductor layer and a second contact region of the second conductivity type semiconductor layer, respectively, in each of the plurality of light emitting cells, a connection electrode on the insulating layer and connecting the first contact region and the second contact region to electrically connect the plurality of light emitting cells to each other, a transparent support substrate on the insulating layer and the connection electrode, and a transparent bonding layer between the insulating layer and the transparent support substrate.

公开(公告)号：US20170236866A1

公开(公告)日：2017-08-17

申请号：US15352933

申请日：2016-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Sub LEE ,  Han Kyu SEONG ,  Yong Il KIM ,  Jung Sub KIM ,  Seul Gee LEE

IPC: H01L27/15 ,  H01L33/50

CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/153 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/502 ,  H01L33/504 ,  H01L33/505 ,  H01L2933/0041 ,  H05B33/0845 ,  H05B33/086 ,  H05B37/0272

Abstract: A pixel of a light emitting diode module, display panel or other device, may comprise different colored sub-pixels, where one of the sub-pixels comprises a wavelength converting material, such as phosphor, to convert light emitted from an associated light emitting diode of that sub-pixel into a color other than the main color of light emitted from that sub-pixel. The wavelength converting material may have an amount selected to tune the color coordinates of the pixel. The amount of wavelength converting material may be determined in response to measuring the intensity of the spectrum of light emitted by the light emitting diode of the sub-pixel, or similarly manufactured sub-pixels, on which the wavelength converting material is to be formed. Methods of manufacturing the same are also disclosed.

公开(公告)号：US20150155432A1

公开(公告)日：2015-06-04

申请号：US14455853

申请日：2014-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Geon Wook YOO ,  Jae Hyeok HEO ,  Sam Mook KANG ,  Han Kyu SEONG

IPC: H01L33/04 ,  H01L33/64 ,  H01L33/08

CPC classification number: H01L33/04 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/64

Abstract: A nanostructure semiconductor light emitting device may include a substrate including a plurality of light emitting nanostructures comprising nanocores including a first conductivity type semiconductor, active layers and second conductivity type semiconductor layers sequentially formed on the nanocores. The light emitting region may include a first region and a second region. The interval between the light emitting nanostructures disposed in the first region may be different than the interval between the light emitting nanostructures disposed in the second region. The first region may be closer to a non-light emitting region than the second region and may have a smaller interval between the light emitting nanostructures than that of the second region. Systems implementing such a nanostructure semiconductor light emitting device and methods of manufacture are also disclosed.

Abstract translation: 纳米结构半导体发光器件可以包括包括多个发光纳米结构的衬底，其包括依次形成在纳米孔上的包括第一导电类型半导体，有源层和第二导电类型半导体层的纳米孔。 发光区域可以包括第一区域和第二区域。 设置在第一区域中的发光纳米结构之间的间隔可以不同于设置在第二区域中的发光纳米结构之间的间隔。 第一区域可以比第二区域更靠近非发光区域，并且可以在发光纳米结构之间具有比第二区域更小的间隔。 还公开了实施这种纳米结构半导体发光器件的系统和制造方法。

公开(公告)号：US20140217357A1

公开(公告)日：2014-08-07

申请号：US14161861

申请日：2014-01-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Ho YOO ,  Han Kyu SEONG ,  Nam Goo CHA ,  Tae Woong KIM

IPC: H01L33/06

CPC classification number: H01L33/24 ,  H01L31/0232 ,  H01L2224/48137 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012

Abstract: A semiconductor light emitting device including a first conductive semiconductor base layer on a substrate; an insulating layer on the first conductive semiconductor base layer, the insulating layer including a plurality of openings through which the first conductive semiconductor base layer is exposed; and a plurality of nanoscale light emitting structures on the first conductive semiconductor base layer, the nanoscale light emitting structures respectively including a first conductive semiconductor core on an exposed region of the first conductive semiconductor base layer, and an active layer, and a second conductive semiconductor layer sequentially disposed on a surface of the first conductive semiconductor core, wherein a lower edge of a side portion of each nanoscale light emitting structure is on an inner side wall of the opening in the insulating layer.

Abstract translation: 一种半导体发光器件，包括在基板上的第一导电半导体基底层; 在所述第一导电半导体基底层上的绝缘层，所述绝缘层包括暴露所述第一导电半导体基底层的多个开口; 以及在所述第一导电半导体基底层上的多个纳米级发光结构，所述纳米级发光结构分别包括在所述第一导电半导体基底层的暴露区域上的第一导电半导体芯和有源层，以及第二导电半导体 层，其顺序地设置在第一导电半导体芯的表面上，其中每个纳米级发光结构的侧部的下边缘在绝缘层中的开口的内侧壁上。

公开(公告)号：US20130252363A1

公开(公告)日：2013-09-26

申请号：US13894918

申请日：2013-05-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han Kyu SEONG ,  Hun Jae CHUNG ,  Jung Ja YANG ,  Cheol Soo SONE

IPC: H01L33/32

CPC classification number: H01L33/32 ,  H01L33/08 ,  H01L33/16 ,  H01L33/24

Abstract: A group III nitride nanorod light emitting device and a method of manufacturing thereof. The method includes preparing a substrate, forming an insulating film including one or more openings exposing parts of the substrate on the substrate, growing first conductive group III nitride nanorod seed layers on the substrate exposed through the openings by supplying a group III source gas and a nitrogen (N) source gas thereto, growing first conductive group III nitride nanorods on the first conductive group III nitride nanorod seed layers by supplying the group III source gas and an impurity source gas in a pulse mode and continuously supplying the N source gas, forming an active layer on a surface of each of the first conductive group III nitride nanorods, and forming a second conductive nitride semiconductor layer on the active layer.

Abstract translation: 一种III族氮化物纳米棒发光器件及其制造方法。 该方法包括：准备衬底，形成绝缘膜，该绝缘膜包括一个或多个开口，暴露在衬底上的衬底的部分;通过提供第III族源气体，在通过开口暴露的衬底上生长第一导电III族氮化物纳米棒种子层; 通过向第一导电III族氮化物纳米棒种子层生长第一导电III族氮化物纳米棒，通过以脉冲模式提供第III族源气体和杂质源气体并连续地供给N源气体，形成氮 在所述第一导电III族氮化物纳米棒中的每一个的表面上的有源层，以及在所述有源层上形成第二导电氮化物半导体层。