Semiconductor devices
    21.
    发明授权

    公开(公告)号:US11217669B2

    公开(公告)日:2022-01-04

    申请号:US16837408

    申请日:2020-04-01

    Abstract: A semiconductor device may include a substrate, an interface insulation pattern, a gate insulation pattern, a threshold voltage controlling metal pattern and a conductive pattern. The interface insulation pattern may be formed on the substrate. The gate insulation pattern including an oxide having a dielectric constant higher than that of silicon oxide may be formed on the interface insulation pattern. The threshold voltage controlling metal pattern may be formed on the gate insulation pattern. The conductive pattern may be formed on the threshold voltage controlling metal pattern. First dopants including at least fluorine may be included within and at at least one surface of the gate insulation pattern and at an upper surface of an interface insulation pattern contacting the gate insulation pattern. The semiconductor device may have excellent electrical characteristics.

    Touch panel controller having reduced noise and power consumption and sensing device including the same

    公开(公告)号:US11157116B2

    公开(公告)日:2021-10-26

    申请号:US16813943

    申请日:2020-03-10

    Abstract: A sensing device includes a touch panel including first and second sensor electrodes, and a touch panel controller acquiring a sensing signal from the touch panel and detecting a user input based on the sensing signal. The touch panel controller acquires the sensing signal from at least one of the first sensor electrodes and the second sensor electrodes in a first mode operating at a first power. The touch panel controller selects a first transmitting electrode, a second transmitting electrode, and receiving electrodes from one of the first sensor electrodes and the second sensor electrodes, inputs a first driving signal to the first transmitting electrode, and inputs a second driving signal having a phase difference of 180 degrees with respect to the first driving signal to the second transmitting electrode in a second mode operating at a second power and a third mode in which a sensing operation is performed.

Patent Agency Ranking