公开(公告)号：US12087853B2

公开(公告)日：2024-09-10

申请号：US17982164

申请日：2022-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinjoo Park ,  Junhee Choi ,  Kiho Kong ,  Joohun Han ,  Nakhyun Kim ,  Junghun Park

IPC: H01L27/12 ,  H01L27/15 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L29/7786 ,  H01L27/1214 ,  H01L27/156 ,  H01L29/66462 ,  H01L29/778 ,  H01L27/15

Abstract: A semiconductor device includes a substrate including a first region and a second region adjacent to the first region, the first and the second regions being disposed in a first direction parallel to an upper surface of the substrate; an etch-stop layer disposed on the first region and the second region; a separation layer disposed on an upper portion of the etch-stop layer, the separation layer being disposed on the first region; a high-electron-mobility transistor (HEMT) element disposed on an upper portion of the separation layer in a second direction perpendicular to an upper surface of the substrate; a light-emitting element disposed on the second region between the substrate and the etch-stop layer; and a plurality of first insulating patterns covering side surfaces of the HEMT element, the plurality of first insulating patterns extending to the etch-stop layer.

公开(公告)号：US11965674B2

公开(公告)日：2024-04-23

申请号：US17235340

申请日：2021-04-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Juwan Park ,  Nakhyun Kim ,  Juyoung Kim ,  Changhyun Park ,  Moonsun Shin ,  Wonhee Lee ,  Hojin Lee ,  Changwoo Jung

IPC: F24F8/10 ,  F24F8/108 ,  F24F13/20 ,  F24F13/28

CPC classification number: F24F8/108 ,  F24F13/20 ,  F24F13/28

Abstract: An air purifier or air conditioner including a filter device. The air purifier includes: a main body: a suction port provided to allow air to flow into the main body; a filter provided in the main body to filter the air suctioned from the suction port and including a frame and a filter body fixed to the frame; an auxiliary filter member separably mounted on the filter; and a locking device provided on the frame of the filter such that the auxiliary filter member is separably mounted on the frame of the filter.

公开(公告)号：US11923476B2

公开(公告)日：2024-03-05

申请号：US17967396

申请日：2022-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nakhyun Kim ,  Junhee Choi ,  Kiho Kong ,  Deukseok Chung

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/50

CPC classification number: H01L33/005 ,  H01L27/156 ,  H01L33/502 ,  H01L2933/0041 ,  H01L2933/0058

Abstract: A method of manufacturing a display device includes forming a first light-emitting area on a substrate, and forming a first color adjustment pattern on the first light-emitting area by emitting first light from the first light-emitting area, wherein the first light-emitting area includes a first semiconductor layer, a second semiconductor layer provided on the first semiconductor layer, a first active layer arranged between the first semiconductor layer and the second semiconductor layer, a first contact electrically connecting the substrate and the first semiconductor layer, and a first preliminary common electrode electrically connected to the second semiconductor layer.

公开(公告)号：US11870008B2

公开(公告)日：2024-01-09

申请号：US17227538

申请日：2021-04-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinjoo Park ,  Junhee Choi ,  Nakhyun Kim ,  Dongho Kim ,  Joohun Han

IPC: H01L33/14 ,  H01L33/04 ,  H01L33/00 ,  H01L27/15 ,  H01L33/56

CPC classification number: H01L33/145 ,  H01L27/156 ,  H01L33/005 ,  H01L33/04 ,  H01L33/56

Abstract: A nanorod light-emitting device is provided. The nanorod light-emitting device includes a first semiconductor layer, a light-emitting layer on the first semiconductor layer, a second semiconductor layer disposed on the light-emitting layer, at least one conductive layer disposed between a central portion of a lower surface of the light-emitting layer and the first semiconductor layer, or between a central portion of an upper surface of the light-emitting layer and the second semiconductor layer, at least one current blocking layer that surrounds a side surface of the at least one conductive layer, and an insulating film that surrounds a side surface of the second semiconductor layer, a side surface of the light-emitting layer, and a side surface of the at least one current blocking layer.

公开(公告)号：US20230402569A1

公开(公告)日：2023-12-14

申请号：US18238390

申请日：2023-08-25

Applicant: Samsung Electronics Co., LTD.

Inventor： Junhee CHOI ,  Nakhyun Kim ,  Jinjoo Park ,  Joohun Han

IPC: H01L33/24 ,  H01L27/15 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40

CPC classification number: H01L33/24 ,  H01L27/156 ,  H01L33/0025 ,  H01L33/0062 ,  H01L33/06 ,  H01L33/145 ,  H01L33/30 ,  H01L33/40

Abstract: Provided is a nanorod light-emitting device including a first semiconductor layer doped with a first conductive type impurity, an emission layer disposed above the first semiconductor layer, a second semiconductor layer disposed above the emission layer and doped with a second conductive type impurity that is electrically opposite to the first conductive type impurity, a conductive layer disposed between at least one of a center portion of a lower surface of the emission layer and the first semiconductor layer and a center portion of an upper surface of the emission layer and the second semiconductor layer, and a current blocking layer surrounding a sidewall of the conductive layer.

公开(公告)号：US20230143907A1

公开(公告)日：2023-05-11

申请号：US17720872

申请日：2022-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Nakhyun Kim ,  Joosung Kim ,  Younghwan Park ,  Junghun Park ,  Dongchul Shin ,  Eunsung Lee ,  Joohun Han

IPC: H01L33/04 ,  H01L27/15 ,  H01L33/24 ,  H01L33/44

CPC classification number: H01L33/04 ,  H01L27/156 ,  H01L33/24 ,  H01L33/44

Abstract: Provided is an epitaxy structure including a substrate having an upper surface, the upper surface having a single crystal structure, a two-dimensional material layer disposed on the upper surface of the substrate, and a plurality of nanorod light emitting devices disposed on an upper surface of the two-dimensional material layer, each of the plurality of nanorod light emitting devices having a nanorod shape extending in a vertical direction, wherein each of the plurality of nanorod light emitting devices includes a light emitting nanorod, and a passivation film disposed adjacent to a sidewall of the light emitting nanorod, the passivation film having insulation.

公开(公告)号：US20230062456A1

公开(公告)日：2023-03-02

申请号：US17982164

申请日：2022-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Jinjoo PARK ,  Junhee Choi ,  Kiho Kong ,  Joohun Han ,  Nakhyun Kim ,  Junghun Park

IPC: H01L29/778 ,  H01L29/66 ,  H01L27/12 ,  H01L27/15

Abstract: A semiconductor device includes a substrate including a first region and a second region adjacent to the first region, the first and the second regions being disposed in a first direction parallel to an upper surface of the substrate; an etch-stop layer disposed on the first region and the second region; a separation layer disposed on an upper portion of the etch-stop layer, the separation layer being disposed on the first region; a high-electron-mobility transistor (HEMT) element disposed on an upper portion of the separation layer in a second direction perpendicular to an upper surface of the substrate; a light-emitting element disposed on the second region between the substrate and the etch-stop layer; and a plurality of first insulating patterns covering side surfaces of the HEMT element, the plurality of first insulating patterns extending to the etch-stop layer.

公开(公告)号：US12145092B2

公开(公告)日：2024-11-19

申请号：US17545305

申请日：2021-12-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongho Seo ,  Gahyun Kim ,  Nakhyun Kim ,  Juyoung Kim

IPC: B01D53/22 ,  B01D46/00 ,  F04D29/66 ,  F24F1/0018 ,  F24F13/08 ,  F24F13/20 ,  F24F13/24 ,  F24F1/0071

Abstract: An air conditioner includes a main body, a fan configured to form an airflow inside the main body, a motor including a shaft to which the fan is coupled, and a motor cover to which the motor is fixed. The motor cover includes a body including a rear surface formed in a truncated cone shape, and a vortex breaker which protrudes toward the fan from the rear surface body along an outer periphery of the body, so as to prevent air, which is discharged from the fan, from forming a vortex.

公开(公告)号：US12107186B2

公开(公告)日：2024-10-01

申请号：US18322075

申请日：2023-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Nakhyun Kim ,  Jinjoo Park ,  Joohun Han

IPC: H01L33/24 ,  H01L25/075 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L33/24 ,  H01L25/0753 ,  H01L33/32 ,  H01L33/0075

Abstract: A semiconductor light emitting diode (LED) and a method of manufacturing the same are provided. The LED includes a first semiconductor layer; a plurality of active elements spaced apart on the first semiconductor layer and each having a width less than a width of the first semiconductor layer; and a second semiconductor layer disposed on the plurality of active elements.

公开(公告)号：US20240266465A1

公开(公告)日：2024-08-08

申请号：US18636979

申请日：2024-04-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joohun HAN ,  Junhee Choi ,  Nakhyun Kim ,  Dongho Kim ,  Jinjoo Park

IPC: H01L33/14 ,  H01L27/15 ,  H01L33/00 ,  H01L33/30

CPC classification number: H01L33/145 ,  H01L27/156 ,  H01L33/0062 ,  H01L33/0095 ,  H01L33/30

Abstract: A nanorod light emitting device, a method of manufacturing the same, and a display apparatus including the nanorod light emitting device are provided. The nanorod light emitting device includes a first semiconductor layer doped with a first conductivity type, a light emitting layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type that is electrically opposite to the first conductivity type, wherein a distance between a lower surface of the first semiconductor layer and an upper surface of the second semiconductor layer is in a range of about 2 μm to about 10 μm, wherein a difference between a diameter of the upper surface of the second semiconductor layer and the lower surface of the first semiconductor layer is 10% or less of a diameter of the upper surface of the second semiconductor layer.