DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20230027414A1

    公开(公告)日:2023-01-26

    申请号:US17870372

    申请日:2022-07-21

    Abstract: A display device includes a substrate with a display area and a non-display area adjacent to the display area, a transistor disposed in the display area of the substrate and on the substrate, a reflective electrode disposed on the transistor and electrically connected to the transistor, the reflective electrode including molybdenum (Mo), an insulating film disposed on the reflective electrode and including at least one thin film layer, the at least one thin film layer including a first thin film including a material having a refractive index of about 2.0 or more, and a second thin film disposed on the first thin film and including a material having a refractive index of about 1.8 or less, a contact electrode disposed on the insulating film and electrically connected to the reflective electrode and a light emitting diode disposed on the insulating film and electrically connected to the contact electrode.

    PIXEL AND DISPLAY APPARATUS
    23.
    发明申请

    公开(公告)号:US20210407414A1

    公开(公告)日:2021-12-30

    申请号:US17155925

    申请日:2021-01-22

    Abstract: A pixel includes a light-emitting element, a driving transistor that controls an amount of a driving current flowing to the light-emitting element according to a gate-source voltage, first and second compensation transistors that operate in response to a first scan signal and are electrically connected in series with each other between a gate and a drain of the driving transistor, first and second gate initialization transistors that operate in response to a second scan signal and are electrically connected in series with each other between a voltage line and the gate of the driving transistor, and a node connection transistor that connects a first floating node and a second floating node to each other in response to the second scan signal. The first floating node is between the first and second compensation transistors, and the second floating node is between the first and second gate initialization transistors.

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