公开(公告)号：US20190304373A1

公开(公告)日：2019-10-03

申请号：US16269858

申请日：2019-02-07

Applicant: Samsung Display Co., Ltd.

Inventor： Seong Min WANG ,  Yong Ho YANG ,  Sung Ho KIM ,  Young-In HWANG

IPC: G09G3/3258 ,  H01L27/32 ,  H01L51/00

Abstract: An organic light emitting diode display includes a flexible substrate, a semiconductor layer on the flexible substrate, and an overlapping layer. The transistor includes a driving transistor, a second transistor to transmit a data voltage transmitted through the data line to an input electrode of the driving transistor, and a third transistor including a gate electrode connected to the scan line, a first electrode connected to an output electrode of the driving transistor, and a second electrode connected to a gate electrode of the driving transistor. The third transistor includes two transistors connected in series to each other and connected to each other at a third node, the third node is formed in the semiconductor layer, an additional capacitance portion is formed in the semiconductor layer in the vicinity of the third node, and the overlapping layer overlaps the third node and the capacitance portion of the semiconductor layer.

公开(公告)号：US20190148411A1

公开(公告)日：2019-05-16

申请号：US16232244

申请日：2018-12-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sung Ho KIM ,  Dong Won KIM ,  Jong Moo HUH

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

CPC classification number: H01L27/1214 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/3241 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3274 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/7869

Abstract: A thin film transistor array panel includes a substrate and a thin film transistor disposed on a surface of the substrate. The thin film transistor includes a semiconductor, a source electrode, and a drain electrode that are disposed on a same layer as one another. The semiconductor is between the source electrode and the drain electrode. The thin film transistor array panel further includes a buffer layer disposed between the semiconductor and the substrate and including an inorganic insulating material. The first edge of the buffer layer is substantially parallel to an adjacent edge of the semiconductor, a second edge of the buffer layer is substantially parallel to an adjacent edge of the source electrode, and a third edge of the buffer layer is substantially parallel to an adjacent edge of the drain electrode.

公开(公告)号：US20180013008A1

公开(公告)日：2018-01-11

申请号：US15469750

申请日：2017-03-27

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sung Ho KIM ,  Min Chul SHIN

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/78618 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1296 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor includes a semiconductor layer, a gate electrode, and an insulating layer. The semiconductor layer includes a source electrode, a drain electrode, and a channel part disposed therebetween. The gate electrode is disposed on the channel part and extends in a direction crossing a channel length direction of the semiconductor layer. The insulating layer includes a second region connected to the first region and extending in a same direction as an extending direction of the gate electrode from the first region. A hydrogen content of the source electrode or the drain electrode is in a range between a maximum hydrogen content that is larger than a hydrogen content of the second region of the insulating layer by about 10% and a minimum hydrogen content that is smaller than the hydrogen content of the second region of the insulating layer by about 10%.

公开(公告)号：US20170323904A1

公开(公告)日：2017-11-09

申请号：US15434150

申请日：2017-02-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sung Ho KIM ,  Dong Won KIM ,  Jong Moo HUH

IPC: H01L27/12

CPC classification number: H01L27/1214 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/3241 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3274 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/7869

Abstract: A thin film transistor array panel includes a substrate and a thin film transistor disposed on a surface of the substrate. The thin film transistor includes a semiconductor, a source electrode, and a drain electrode that are disposed on a same layer as one another. The semiconductor is between the source electrode and the drain electrode. The thin film transistor array panel further includes a buffer layer disposed between the semiconductor and the substrate and including an inorganic insulating material. The first edge of the buffer layer is substantially parallel to an adjacent edge of the semiconductor, a second edge of the buffer layer is substantially parallel to an adjacent edge of the source electrode, and a third edge of the buffer layer is substantially parallel to an adjacent edge of the drain electrode.