公开(公告)号：US20150318338A1

公开(公告)日：2015-11-05

申请号：US14794976

申请日：2015-07-09

Applicant: Samsung Display Co., Ltd.

Inventor： Hui-Won Yang ,  Chaun-Gi Choi

IPC: H01L27/32 ,  H01L29/786

CPC classification number: H01L51/56 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/7869

Abstract: A method of manufacturing an organic light emitting display device includes: providing a capacitor on a substrate; providing a protection layer on the capacitor; providing an organic light emitting diode on the protection layer; and providing an encapsulation layer which encapsulates the organic light emitting diode. The providing the capacitor includes: providing a bottom electrode including an oxide semiconductor, on the substrate; providing an insulation layer on the substrate and overlapping the bottom electrode; annealing the bottom electrode to increase a carrier density of the bottom electrode; and providing an intermediate electrode on the insulation layer and overlapping the bottom electrode.

Abstract translation: 一种制造有机发光显示装置的方法包括：在基板上设置电容器; 在电容器上提供保护层; 在保护层上提供有机发光二极管; 并提供封装有机发光二极管的封装层。 提供电容器包括：在基板上提供包括氧化物半导体的底部电极; 在衬底上提供绝缘层并与底部电极重叠; 对底部电极进行退火以增加底部电极的载流子密度; 并在绝缘层上提供中间电极并与底部电极重叠。

公开(公告)号：US09153700B2

公开(公告)日：2015-10-06

申请号：US14034291

申请日：2013-09-23

Applicant: Samsung Display Co., LTD.

Inventor： Hui-Won Yang ,  Chaun-Gi Choi

IPC: H01L29/12 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L27/32

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/66969

Abstract: A method of manufacturing a thin-film transistor includes: forming an oxide semiconductor pattern including a first region and a second region on a substrate; forming an insulation film on the substrate to cover the oxide semiconductor pattern; removing the insulation film on the second region through patterning; increasing carrier density of the first region of the oxide semiconductor pattern through an annealing process; forming a gate electrode on the insulation film so that the gate electrode is insulated from the oxide semiconductor pattern and overlaps the second region; and forming a source electrode and a drain electrode to be insulated from the gate electrode and contact the first region.

Abstract translation: 制造薄膜晶体管的方法包括：在衬底上形成包括第一区域和第二区域的氧化物半导体图案; 在所述基板上形成绝缘膜以覆盖所述氧化物半导体图案; 通过图案去除第二区域上的绝缘膜; 通过退火处理来增加氧化物半导体图案的第一区域的载流子密度; 在所述绝缘膜上形成栅电极，使得所述栅电极与所述氧化物半导体图案绝缘并且与所述第二区域重叠; 以及形成与栅电极绝缘的源电极和漏极，并与第一区接触。

公开(公告)号：US08546175B2

公开(公告)日：2013-10-01

申请号：US13678256

申请日：2012-11-15

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun-Joong Chung ,  Jin-Seong Park ,  Jong-Han Jeong ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Min-Kyu Kim ,  Tae-Kyung Ahn ,  Hui-Won Yang ,  Kwang-Suk Kim ,  Eun-Hyun Kim ,  Jae-Wook Kang ,  Jae-Soon Im

IPC: H01L21/00

CPC classification number: H01L27/3248 ,  H01L27/1225 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/7869 ,  H01L51/52 ,  H01L51/5237 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/5346

Abstract: Disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.

Abstract translation: 公开了一种制造有机发光显示装置的方法。 有机发光显示装置可以包括例如薄膜晶体管（TFT），其包括栅电极，与栅电极绝缘的有源层，与栅电极绝缘的源电极和漏电极，并与活性层接触和 设置在所述源极和漏极之间的绝缘层和所述有源层; 以及与TFT电连接的有机发光二极管。 绝缘层可以包括例如与活性层接触的第一绝缘层; 以及由金属氧化物形成并设置在第一绝缘层上的第二绝缘层。