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公开(公告)号：US20240172464A1
公开(公告)日：2024-05-23
申请号：US18404975
申请日：2024-01-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nayoun WON , Mi Hye LIM , Tae Gon KIM , Taekhoon KIM , Shang Hyeun PARK , Shin Ae JUN
IPC: H10K50/115 , C09K11/02 , C09K11/56 , C09K11/70 , C09K11/88
CPC classification number: H10K50/115 , C09K11/02 , C09K11/565 , C09K11/703 , C09K11/883
Abstract: A cadmium-free, core shell quantum dot, a quantum dot polymer composite, and electronic devices including the quantum dot polymer composite. The core shell quantum dot has an extinction coefficient per gram of greater than or equal to 0.3, an ultraviolet-visible absorption spectrum curve that has a positive differential coefficient value at 450 nm, wherein the core shell quantum dot includes a semiconductor nanocrystal core including indium and phosphorus, and optionally zinc, and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur, wherein the core shell quantum dot has a quantum efficiency of greater than or equal to about 80%, and is configured to emit green light upon excitation.
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公开(公告)号：US20230121293A1
公开(公告)日：2023-04-20
申请号：US18074570
申请日：2022-12-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyeyeon YANG , Garam PARK , Shin Ae JUN , Tae Gon KIM , Taekhoon KIM
Abstract: A quantum dot including a multi-component core including a first semiconductor nanocrystal including indium (In), zinc (Zn), and phosphorus (P) and a second semiconductor nanocrystal disposed on the first semiconductor nanocrystal, the second semiconductor nanocrystal including gallium (Ga) and phosphorus (P) wherein the quantum dot is cadmium-free and emits green light, a mole ratio (P:In) of phosphorus relative to indium is greater than or equal to about 0.6:1 and less than or equal to about 1.0, and a mole ratio (P:(In+Ga)) of phosphorus relative to indium and gallium is greater than or equal to about 0.5:1 and less than or equal to about 0.8:1, a quantum dot-polymer composite pattern including the same, and a display device.
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Patent Agency Ranking
公开(公告)号：US20230086635A1
公开(公告)日：2023-03-23
申请号：US18059075
申请日：2022-11-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Garam PARK , Eun Joo JANG , Yongwook KIM , Jihyun MIN , Hyo Sook JANG , Shin Ae JUN , Taekhoon KIM , Yuho WON
Abstract: A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.
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公开(公告)号：US20230043195A1
公开(公告)日：2023-02-09
申请号：US17871127
申请日：2022-07-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Gon KIM , Shang Hyeun PARK , Taekhoon KIM , Garam PARK , Nayoun WON
Abstract: A quantum dot, a quantum dot composite including the quantum dot, a display panel including the quantum dot composite, and an electronic device including the display panel are provided. The quantum dot includes indium, zinc, phosphorus, and selenium, and does not include cadmium, and has an optical density (OD) per 1 mg for a wavelength of 450 nm of from about 0.2 to about 0.27 and an emission peak of from about 500 nm to about 550 nm, or an optical density per 1 mg for a wavelength of about 450 nm of from about 0.5 to about 0.7 and an emission peak of from about 610 nm to about 660 nm.
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25.发明申请公开(公告)号：US20180179441A1
公开(公告)日：2018-06-28
申请号：US15855436
申请日：2017-12-27
Inventor： Young Seok PARK , Shang Hyeun PARK , Eun Joo JANG , Hyo Sook JANG , Shin Ae JUN , Dae Young CHUNG , Taekhoon KIM , Yuho WON
CPC classification number: C09K11/883 , B82Y30/00 , B82Y40/00 , C09K11/025 , G02B5/22 , G02B5/223 , H01L27/322 , H01L51/0035 , H01L51/0037 , H01L51/0039 , H01L51/502 , Y10S977/774 , Y10S977/818 , Y10S977/824 , Y10S977/892 , Y10S977/896 , Y10S977/95
Abstract: A process for preparing a quantum dot of a core-shell structure including obtaining a first mixture including first precursor including a first metal, a ligand compound, and a solvent; adding a second precursor and a particle including a first semiconductor nanocrystal to the first mixture to obtain a second mixture; and heating the second mixture up to a reaction temperature and performing a reaction between the first precursor and the second precursor to form a layer of a shell including a crystalline or amorphous material, during formation of the layer of the shell or after formation of the layer of the shell, wherein the process includes adding an organic solution including an ammonium fluorinated salt including a solid salt having a melting point of greater than or equal to about 110° C. to the second mixture.
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公开(公告)号：US20170183565A1
公开(公告)日：2017-06-29
申请号：US15387107
申请日：2016-12-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Shin Ae JUN , Taekhoon KIM , Garam PARK , Yong Seok HAN , Eun Joo JANG , Hyo Sook JANG , Tae Won JEONG , Shang Hyeun PARK
Abstract: A quantum dot-polymer composite including a polymer matrix; and a plurality of quantum dots dispersed in the polymer matrix, wherein the quantum dot includes a core including a first semiconductor material; and a shell including a second semiconductor material disposed on the core, wherein the quantum dot is cadmium-free, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.
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公开(公告)号：US20160214862A1
公开(公告)日：2016-07-28
申请号：US14908710
申请日：2014-07-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Taekhoon KIM , Eun Joo JANG , Hyo Sook JANG , Shin Ae JUN , Hyunki KIM
Abstract: A process of synthesizing Mg—Se nanocrystals is provided, the process including reacting a first precursor including magnesium and a second precursor including selenium in the presence of a ligand compound in an organic solvent to form a nanocrystal of MgSe or an alloy thereof, wherein the organic solvent and the ligand compound do not include an oxygen functional group.
Abstract translation: 提供合成Mg-Se纳米晶体的方法，该方法包括在配体化合物存在下在有机溶剂中使包含镁的第一前体和包含硒的第二前体反应形成MgSe或其合金的纳米晶体，其中 有机溶剂和配体化合物不包括氧官能团。
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