公开(公告)号：US20150340522A1

公开(公告)日：2015-11-26

申请号：US14554363

申请日：2014-11-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsup CHOI ,  Wonjong YOO ,  Deshun QU ,  Changho RA ,  Xiaochi LIU ,  Seunghwan LEE ,  Jia LEE

IPC: H01L31/0224 ,  H01L31/0232 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L31/022425 ,  H01L31/032 ,  H01L31/054 ,  Y02E10/52

Abstract: According to example embodiments, an electronic device includes a substrate, an insulating layer on the substrate, and a diode layer on the insulating layer. The diode layer includes a two dimensional (2D) material layer. The 2D material layer includes an N-type region and a P-type region. According to example embodiments, a method of manufacturing an electronic device includes forming an insulating film on a substrate, forming a 2D material layer on the insulating film, and dividing the 2D material layer into an N-type region and a P-type region.

Abstract translation: 根据示例性实施例，电子设备包括衬底，衬底上的绝缘层和绝缘层上的二极管层。 二极管层包括二维（2D）材料层。 2D材料层包括N型区域和P型区域。 根据示例性实施例，一种制造电子器件的方法包括在衬底上形成绝缘膜，在绝缘膜上形成2D材料层，并将2D材料层划分成N型区域和P型区域。