公开(公告)号：US20210043828A1

公开(公告)日：2021-02-11

申请号：US16793336

申请日：2020-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungil HONG ,  Younghyun KIM ,  Junghwan PARK ,  Sechung OH ,  Jungmin LEE

IPC: H01L43/02 ,  H01L27/22 ,  H01L27/24 ,  H01L27/1159 ,  H01L43/08 ,  H01L43/12

Abstract: A semiconductor device includes a plurality of magnetic tunnel junction (MTJ) structures in an interlayer insulating layer on a substrate. A blocking layer is on the interlayer insulating layer and the plurality of MTJ structures. An upper insulating layer is on the blocking layer. An upper interconnection is on the upper insulating layer. An upper plug is connected to the upper interconnection and a corresponding one of the plurality of MTJ structures and extends into the upper insulating layer and the blocking layer. The blocking layer includes a material having a higher absorbance constant than the upper insulating layer.