公开(公告)号：US20230369230A1

公开(公告)日：2023-11-16

申请号：US17742001

申请日：2022-05-11

Applicant: QUALCOMM Incorporated

Inventor： Yangyang SUN ,  Manuel ALDRETE ,  Lily ZHAO

IPC: H01L23/538 ,  H01L23/00 ,  H01L23/31 ,  H01L25/10 ,  H01L25/00 ,  H01L21/56

CPC classification number: H01L23/5383 ,  H01L24/08 ,  H01L23/3107 ,  H01L23/5384 ,  H01L25/105 ,  H01L25/50 ,  H01L21/56

Abstract: A package comprising a first metallization portion, a first integrated device, an interconnection die, a second metallization portion, and an encapsulation layer. The first metallization portion includes at least one first dielectric layer and a first plurality of metallization interconnects. The first integrated device is coupled to the first metallization portion. The interconnection die is coupled to the first metallization portion. The second metallization portion coupled to the first metallization portion through the interconnection die such that the first integrated device and the interconnection die are located between the first metallization portion and the second metallization portion. The second metallization portion includes at least one second dielectric layer and a second plurality of metallization interconnects. The encapsulation layer coupled to the first metallization portion and the second metallization portion, wherein the encapsulation layer is located between the first metallization portion and the second metallization portion.