公开(公告)号：US20140203404A1

公开(公告)日：2014-07-24

申请号：US13745962

申请日：2013-01-21

Applicant: QUALCOMM INCORPORATED

Inventor： Jihong Choi ,  John J. Zhu ,  PR Chidambaram ,  Bin Yang ,  Lixin Ge

IPC: H01L49/02

CPC classification number: H01L28/87 ,  H01L23/5223 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Spiral metal-on-metal (MoM or SMoM) capacitors and related systems and methods of forming MoM capacitors are disclosed. In one embodiment, a MoM capacitor disposed in a semiconductor die is disclosed. The MoM capacitor comprises a first electrode coupled to a first trace. The first trace is coiled in a first inwardly spiraling pattern and comprised of first parallel trace segments. The MoM capacitor also comprises a second electrode coupled to a second trace. The second trace is coiled in the first inwardly spiraling pattern and comprised of second parallel trace segments interdisposed between the first parallel trace segments. Reduced variations in the capacitance allow circuit designers to build circuits with tighter tolerances and generally improve circuit reliability.

Abstract translation: 公开了形成MoM电容器的螺旋金属金属（MoM或SMoM）电容器及相关系统和方法。 在一个实施例中，公开了一种设置在半导体管芯中的MoM电容器。 MoM电容器包括耦合到第一迹线的第一电极。 第一迹线卷绕在第一向内螺旋形的图案中并由第一平行迹线段组成。 MoM电容器还包括耦合到第二迹线的第二电极。 第二迹线卷绕在第一向内螺旋形图案中，并且包括间隔在第一平行迹线段之间的第二平行迹线段。 降低电容的变化允许电路设计者构建更严格公差的电路，并且通常提高电路的可靠性。

公开(公告)号：US20140197519A1

公开(公告)日：2014-07-17

申请号：US13743388

申请日：2013-01-17

Applicant: QUALCOMM INCORPORATED

Inventor： Jihong Choi ,  John J. Zhu ,  PR Chidambaram ,  Bin Yang ,  Lixin Ge

IPC: H01L49/02 ,  G06F17/50

CPC classification number: H01L28/92

Abstract: In a particular embodiment, a method of forming a metal-insulator-metal (MIM) capacitor includes removing, using a lithographic mask, a first portion of an optical planarization layer to expose a region in which the MIM capacitor is to be formed. A second portion of an insulating layer is formed on a first conductive layer that is formed on a plurality of trench surfaces within the region. The method further includes removing at least a third portion of the insulating layer according to a lift-off technique.

Abstract translation: 在特定实施例中，形成金属 - 绝缘体 - 金属（MIM）电容器的方法包括使用光刻掩模去除光学平坦化层的第一部分以暴露其中将形成MIM电容器的区域。 绝缘层的第二部分形成在形成在该区域内的多个沟槽表面上的第一导电层上。 该方法还包括根据剥离技术去除绝缘层的至少第三部分。

公开(公告)号：US20130320494A1

公开(公告)日：2013-12-05

申请号：US13721089

申请日：2012-12-20

Applicant: QUALCOMM INCORPORATED

Inventor： John J. Zhu ,  PR Chidambaram ,  Lixin Ge ,  Bin Yang ,  Jihong Choi

IPC: H01L49/02

CPC classification number: H01L28/40 ,  H01L23/5223 ,  H01L27/0207 ,  H01L28/86 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor die having a plurality of metal layers, including a set of metal layers having a preferred direction for minimum feature size. The set of metal layers are such that adjacent metal layers have preferred directions orthogonal to one another. Finger capacitors formed in the set of metal layers are such that a finger capacitor formed in one metal layer has a finger direction parallel to the preferred direction of that metal layer. In bidirectional metal layers, capacitor fingers may be in either direction.

Abstract translation: 一种具有多个金属层的半导体管芯，包括一组具有最小特征尺寸的优选方向的金属层。 金属层的组合使得相邻的金属层具有彼此正交的优选方向。 形成在金属层组中的手指电容器使得形成在一个金属层中的手指电容器具有平行于该金属层的优选方向的手指方向。 在双向金属层中，电容指可以在任一方向上。