公开(公告)号：US20080294695A1

公开(公告)日：2008-11-27

申请号：US12221121

申请日：2008-07-30

申请人： John Lawrence Ervin ,  Hus Tigli

发明人： John Lawrence Ervin ,  Hus Tigli

IPC分类号： G06F17/00

CPC分类号： A63B69/18 ,  A63B69/0059 ,  A63B71/12

摘要： The use of XML in the context of a system of instrument modules used to study label free binding interactions. This includes provisions for computer to instrument communication using XML, intramodule communication using XML, a data format in XML and for automated firmware testing using XML.

摘要翻译： 在用于研究标签自由结合相互作用的仪器模块系统的上下文中使用XML。 这包括使用XML的计算机到仪器通信的规定，使用XML的模块间通信，XML中的数据格式以及使用XML的自动化固件测试。

公开(公告)号：US20070012574A1

公开(公告)日：2007-01-18

申请号：US11180394

申请日：2005-07-13

申请人： Christine Rauh-Adelmann ,  Hus Tigli ,  Susant Patra ,  Kenneth Dickerson

发明人： Christine Rauh-Adelmann ,  Hus Tigli ,  Susant Patra ,  Kenneth Dickerson

IPC分类号： C25D11/12

CPC分类号： C25D11/32 ,  B82Y30/00

摘要： A process for the fabrication of macroporous silicon from silicon wafers. Preferred embodiments include a two-step-etch process that results in a single, macroporous layer of silicon with pore depths of several microns and relatively uniform equivalent diameters with an operator chosen mean equivalent diameter. The mean diameter determined by the operator is a mean diameter within the range of about 40 nm to about 250 nm and is determined, at least in part, by selection of an applied current density. Uniformity of equivalent pore diameter is greatly improved as compared to prior art porous silicon fabrication techniques. In a first electrochemical anodisation step, a macroporous layer is created that is covered by a shallower combination microporous-mesoporous layer. The wafer is removed and the top surface of the wafer is dissolved under alkaline conditions, producing “pits”. These “pits” serve as defect sites during a second electrochemical anodisation step, resulting in a single, uniform, macroporous layer in the silicon wafer. Preferably, the wafer with its porous silicon surface is quickly rinsed in acetone and then pentane to preserve the structure of the pores and prevent collapsing of pore walls. The process of the present invention eliminates the upper, nanoporous region produced by prior art processes. In a preferred embodiment, utilizing a current density of 181.8 mA/cm2 in the two-etch-step process, the resulting mean equivalent pore diameter is about 100 nm with more than half of the equivalent pores diameters within about ±50 nm of the mean equivalent pore diameter. By increasing or decreasing the anodisation current, porous layers with mean diameters within the range of about 40 nm to about 250 nm can be created.

摘要翻译： 一种从硅晶片制造大孔硅的工艺。 优选的实施方案包括两步蚀刻工艺，其导致具有几微米的孔深度和相对均匀的等效直径的单个大孔硅层，操作者选择平均当量直径。 由操作者确定的平均直径是在约40nm至约250nm的范围内的平均直径，并且至少部分地通过选择所施加的电流密度来确定。 与现有技术的多孔硅制造技术相比，等效孔径的均匀性大大提高。 在第一电化学阳极氧化步骤中，产生由较浅组合的微孔介孔层覆盖的大孔层。 去除晶片，晶片的顶面在碱性条件下溶解，产生“凹坑”。 这些“凹坑”在第二电化学阳极氧化步骤期间用作缺陷位点，从而在硅晶片中形成单一均匀的大孔层。 优选地，其具有多孔硅表面的晶片在丙酮中快速漂洗，然后用戊烷洗涤以保持孔的结构并防止孔壁的塌陷。 本发明的方法消除了由现有技术方法生产的上部纳米多孔区域。 在优选的实施方案中，在双蚀刻步骤过程中利用181.8mA / cm 2的电流密度，所得到的平均当量孔径为约100nm，具有多于一半的当量孔径 在平均当量孔径的约±50nm内。 通过增加或减少阳极化电流，可以产生平均直径在约40nm至约250nm范围内的多孔层。

公开(公告)号：US20050152638A1

公开(公告)日：2005-07-14

申请号：US10838070

申请日：2004-05-03

申请人： Todd Barrett ,  Chris Sexton ,  Donald Bruns ,  Dave Sandler ,  Hus Tigli

发明人： Todd Barrett ,  Chris Sexton ,  Donald Bruns ,  Dave Sandler ,  Hus Tigli

IPC分类号： G02B6/12 ,  G02B6/26 ,  G02B6/34 ,  G02B6/35 ,  G02B26/08 ,  G02B27/62 ,  H04Q11/00

CPC分类号： G02B6/3588 ,  G02B6/266 ,  G02B6/3512 ,  G02B6/3518 ,  G02B6/3542 ,  G02B6/3556 ,  G02B6/356 ,  G02B6/357 ,  G02B6/3584 ,  G02B6/359 ,  G02B26/0833 ,  G02B27/62 ,  G02B2006/12104 ,  H04Q11/0062 ,  H04Q11/0071 ,  H04Q2011/0073

摘要： An optical cross connect switch. In this switch any optical fiber in an input set of optical fibers, each carrying a communication beam, can be cross connected to any optical fiber in an output set of optical fibers. An alignment beam is added to and aligned co-axially with the communication beam carried by each fiber in the input set of optical fibers to define a communication-alignment beam for each fiber. Each communication-alignment beam is directed within a confined optical pathway to a specific exit aperture in an input array structure. The exit apertures for all of the communication-alignment beams are arranged in a pattern defining an input array so that each communication-alignment beam can be identified by the location of its exit aperture in the input array structure. Each communication-alignment beam is formed into a cross-connection beam by a micro-lens in a first lens micro-lens array. Each cross-connection beam is directed to a lens in a second lens array by two mirrors, a first mirror in a first mirror array and a second mirror in a second mirror array. The lens in the second micro-lens array focuses the communication beams into a specific input aperture of a confined optical pathway, preferably an optical fiber, in an output array structure. Each of the confined optical pathways in the output array structure is optically connected to an optical fiber of an output set of optical fibers. A first detector array located near the second lens array monitors the position of each alignment beam and provides position information to a processor for control of the mirrors in at least one of the mirror arrays.

摘要翻译： 光交叉开关。 在该开关中，输入光纤组中的任何光纤，每个携带通信光束的光纤可以交叉连接到输出光纤组中的任何光纤。 对准光束被添加到光纤的输入组中并与由每个光纤携带的通信光束同轴地对准，以限定每个光纤的通信对准光束。 每个通信对准光束被引导到一个有限的光学路径中，到达输入阵列结构中的一个特定的出射孔。 用于所有通信对准光束的出射孔以限定输入阵列的图案布置，使得每个通信对准光束可以通过其输入阵列结构中其出射孔的位置来识别。 每个通信对准光束通过第一透镜微透镜阵列中的微透镜形成为交叉连接光束。 每个交叉连接梁通过两个反射镜指向第二透镜阵列中的透镜，第一反射镜阵列中的第一反射镜和第二反射镜阵列中的第二反射镜。 第二微透镜阵列中的透镜将通信光束聚焦成输出阵列结构中的限制光学路径（优选光纤）的特定输入孔径。 输出阵列结构中的每个限制光路径光学地连接到输出光纤组的光纤。 位于第二透镜阵列附近的第一检测器阵列监视每个对准光束的位置，并向处理器提供位置信息，以控制至少一个反射镜阵列中的反射镜。