Light emitting device package and lighting apparatus including the package

    公开(公告)号:US09991433B2

    公开(公告)日:2018-06-05

    申请号:US15645788

    申请日:2017-07-10

    Abstract: Embodiments provide a light emitting device package including a substrate, a light emitting structure disposed under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes connected to the first and second conductive semiconductor layers, a first pad connected to the first electrodes in first-first through-holes penetrating the second conductive semiconductor layer and the active layer, and a first insulation layer disposed between the first pad and the second conductive semiconductor layer and between the first pad and the active layer to cover the first electrodes in a first-second through-hole, and a second pad connected to the second electrode through a second through-hole penetrating the first insulation layer and electrically spaced apart from the first pad. The second pad does not overlap the first insulation layer in the first-second through-hole in a thickness direction of the light emitting structure.

    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE COMPRISING THE SAME AND LIGHTING SYSTEM
    29.
    发明申请
    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE COMPRISING THE SAME AND LIGHTING SYSTEM 审中-公开
    发光装置,包含其的发光装置包装和照明系统

    公开(公告)号:US20160197238A1

    公开(公告)日:2016-07-07

    申请号:US15069758

    申请日:2016-03-14

    Abstract: A light emitting device including a substrate, a first conductive layer on the substrate, a second conductive layer on the first conductive layer, a metal layer on the second conductive layer, a light emitting structure on the metal layer and the second conductive layer, the light emitting structure including a first semiconductor layer containing AlGaN, an active layer, and a second semiconductor layer containing AlGaN, a first electrode on the light emitting structure, and a passivation layer disposed on a side surface of the light emitting structure. Further, the metal layer directly contacts with the light emitting structure, the second conductive layer directly contacts with the light emitting structure, a portion of the passivation layer is disposed on a top surface of the light emitting structure, a width of the second conductive layer greater than a width of the metal layer, and a distance between a top surface of the substrate and a bottom surface of the metal layer at a center portion of the metal layer is different from a distance between the top surface of the substrate and the bottom surface of the metal layer at a side portion of the metal layer.

    Abstract translation: 一种发光器件,包括衬底,衬底上的第一导电层,第一导电层上的第二导电层,第二导电层上的金属层,金属层上的发光结构和第二导电层, 包括含有AlGaN的第一半导体层,有源层和包含AlGaN的第二半导体层,发光结构上的第一电极和设置在发光结构的侧表面上的钝化层的发光结构。 此外,金属层与发光结构直接接触,第二导电层直接与发光结构接触,钝化层的一部分设置在发光结构的顶表面上,第二导电层的宽度 大于金属层的宽度,并且在金属层的中心部分的衬底的顶表面和金属层的底表面之间的距离与衬底的顶表面和底部之间的距离不同 在金属层的侧面处的金属层的表面。

    Light emitting device, light emitting device package comprising the same and lighting system
    30.
    发明授权
    Light emitting device, light emitting device package comprising the same and lighting system 有权
    发光器件,包括该发光器件的发光器件封装和照明系统

    公开(公告)号:US09356195B2

    公开(公告)日:2016-05-31

    申请号:US14500311

    申请日:2014-09-29

    Abstract: A light emitting device including a support substrate, an adhesive layer on the support substrate, a conductive layer on the adhesive layer, a light emitting structure on the conductive layer, the light emitting structure including a first semiconductor layer containing AlGaN, an active layer, and a second semiconductor layer containing AlGaN, a first electrode on the light emitting structure, a metal layer disposed under the conductive layer and at an adjacent region of the conductive layer, and a passivation layer disposed on a side surface of the light emitting structure, wherein the first electrode is vertically non-overlapped with the conductive layer, wherein the conductive layer includes a first layer and a second layer on the first layer, wherein the second layer directly contacts with the light emitting structure, wherein the metal layer directly contacts with the light emitting structure, wherein the metal layer is expanded to an outer area of the light emitting structure, and wherein the passivation layer is disposed on the metal layer at the outer surface of the light emitting structure.

    Abstract translation: 一种发光器件,包括支撑衬底,支撑衬底上的粘合剂层,粘合剂层上的导电层,导电层上的发光结构,发光结构包括含有AlGaN的第一半导体层,有源层, 以及包含AlGaN的第二半导体层,所述发光结构上的第一电极,设置在所述导电层下方和所述导电层的相邻区域的金属层,以及设置在所述发光结构的侧表面上的钝化层, 其中所述第一电极与所述导电层垂直不重叠,其中所述导电层包括在所述第一层上的第一层和第二层,其中所述第二层直接与所述发光结构接触,其中所述金属层直接与 所述发光结构,其中所述金属层扩展到所述发光结构的外部区域, d,其中钝化层设置在发光结构的外表面处的金属层上。

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