公开(公告)号：US07005372B2

公开(公告)日：2006-02-28

申请号：US10690492

申请日：2003-10-20

Applicant: Karl B. Levy ,  Junghwan Sung ,  Kaihan A. Ashtiani ,  James A. Fair ,  Joshua Collins ,  Juwen Gao

Inventor： Karl B. Levy ,  Junghwan Sung ,  Kaihan A. Ashtiani ,  James A. Fair ,  Joshua Collins ,  Juwen Gao

IPC: H01L21/4763

CPC classification number: C23C16/4554 ,  C23C16/0272 ,  C23C16/34 ,  C23C16/45531 ,  C23C16/45534 ,  H01L21/28562 ,  H01L21/76843

Abstract: Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.

Abstract translation: 描述了用于沉积氮化钨层的方法。 该方法使用精心控制的沉积技术如脉冲成核层（PNL）形成氮化钨层。 最初，在衬底表面上形成钨层。 然后将钨层暴露于氮化剂以形成氮化钨层。 形成相对较厚层的方法涉及与还原剂钨前体和氮化剂接触的重复循环。 在一些情况下，该循环还可以包括与诸如膦或胂的掺杂剂前体接触。

公开(公告)号：US06844258B1

公开(公告)日：2005-01-18

申请号：US10435010

申请日：2003-05-09

Applicant: James A. Fair ,  Robert H. Havemann ,  Jungwan Sung ,  Nerissa Taylor ,  Sang-Hyeob Lee ,  Mary Anne Plano

Inventor： James A. Fair ,  Robert H. Havemann ,  Jungwan Sung ,  Nerissa Taylor ,  Sang-Hyeob Lee ,  Mary Anne Plano

IPC: H01L21/285 ,  H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/76856 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76889

Abstract: A method for creating a refractory metal and refractory metal nitride cap effective for reducing copper electromigration and copper diffusion is described. The method includes depositing a refractory metal nucleation layer and nitriding at least the upper portion of the refractory metal layer to form a refractory metal nitride. Methods to reduce and clean the copper lines before refractory metal deposition are also described. Methods to form a thicker refractory metal layer using bulk deposition are also described.

Abstract translation: 描述了一种用于制造有效减少铜电迁移和铜扩散的难熔金属和难熔金属氮化物盖的方法。 该方法包括沉积难熔金属成核层并至少氮化至难熔金属层的上部以形成难熔金属氮化物。 还描述了在难熔金属沉积之前减少和清洁铜线的方法。 还描述了使用体积沉积形成较厚难熔金属层的方法。

公开(公告)号：US5751019A

公开(公告)日：1998-05-12

申请号：US350763

申请日：1994-12-06

Applicant: James A. Fair

Inventor： James A. Fair

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/04 ,  H01L29/76 ,  H01L31/112

CPC classification number: H01L27/10852 ,  H01L27/10808 ,  H01L28/40

Abstract: Method and apparatus for reducing current leakage between overlapping conductive structures in a multi-layered integrated circuit device such as a thin film capacitor is described. A conductive structure operating as a raised lower electrode is preferably fashioned by step-like erosion using a photolithographic techniques atop a dielectric substrate. In accordance with this invention, the dielectric substrate itself is allowed to erode as well to space the conductive structure away from the problemmatic inner corners of the step. By so distancing such conductive structures, like electrodes, from these inside corners, even conventional deposition techniques can be used to fabricate a capacitive device of operational tolerance suitable for DRAM application without risk of unwanted electrode current leakage and possible shorting. By so separating, the capacitance of the device can be reliably increased by increasing the available three dimensional capacitor area and decreasing the film thickness rather than relying primarily on high permittivity dielectrics.

Abstract translation: 描述了用于减少诸如薄膜电容器的多层集成电路装置中的重叠导电结构之间的电流泄漏的方法和装置。 作为升高的下电极操作的导电结构优选地通过使用电介质基板顶部的光刻技术的阶梯状侵蚀来形成。 根据本发明，允许电介质基板本身也被侵蚀，以使导电结构远离台阶的可疑内角。 通过如此远离这些内角的导电结构（如电极），甚至常规沉积技术也可用于制造适用于DRAM应用的操作公差的电容性器件，而不会有不必要的电极电流泄漏和可能的短路的危险。 通过这样分离，可以通过增加可用的三维电容器面积并减小膜厚度而不是主要依赖于高介电常数电介质来可靠地增加器件的电容。