专利检索 ap:("GIUSEPPE CURELLO" OR "Ian R. Post" OR "Chia-Hong Jan" OR "Mark Bohr") AND inv:"Ian R. Post" 第 3 页

21.

发明授权
Thin tensile layers in shallow trench isolation and method of making same 有权

公开(公告)号：US06368931B1

公开(公告)日：2002-04-09

申请号：US09536860

申请日：2000-03-27

申请人： Kelin J. Kuhn , Ian R. Post

发明人： Kelin J. Kuhn , Ian R. Post

IPC分类号： H01L21331

CPC分类号： H01L21/3144 , H01L21/76232

摘要： The present invention relates to a method of forming an isolation trench that comprises forming a recess in a substrate and forming a film upon the sidewall under conditions that cause the film to have a tensile load. The method includes filling the recess with a material that imparts a compressive load upon the film under conditions that oppose the tensile load. The present invention is particularly well suited for shallow isolation trench filling in the 0.13 micron geometry range, and smaller.