公开(公告)号：US20140077297A1

公开(公告)日：2014-03-20

申请号：US13772236

申请日：2013-02-20

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jae Bon KOO ,  Soon-Won JUNG ,  Bock Soon NA ,  Chan Woo PARK ,  Sang Chul LIM ,  Ji-Young OH ,  Hye Yong CHU

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78603 ,  H01L29/41733 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/78636 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0076 ,  H01L51/0097 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/102

Abstract: Provided is a thin film transistor. The thin film transistor according to an embodiment of the present invention may include a source electrode and a drain electrode buried in a first flexible substrate, a semiconductor layer disposed on the first flexible substrate to be positioned between the source electrode and the drain electrode, a gate insulating layer completely cover the semiconductor layer, and a gate electrode facing the semiconductor layer on the gate insulating layer.

Abstract translation: 提供一种薄膜晶体管。 根据本发明实施例的薄膜晶体管可以包括埋入第一柔性衬底中的源电极和漏电极，设置在第一柔性衬底上以定位在源电极和漏电极之间的半导体层， 栅极绝缘层完全覆盖半导体层，并且栅极电极面对栅极绝缘层上的半导体层。