公开(公告)号：US20170294345A1

公开(公告)日：2017-10-12

申请号：US15512372

申请日：2016-03-03

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiaoyong Lu ,  Hongwei Tian ,  Yueping Zuo ,  Xiaowei Xu ,  Wenqing Xu ,  Chunping Long

IPC: H01L21/768

CPC classification number: H01L21/76877 ,  H01L21/02063 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/67 ,  H01L21/76814

Abstract: Provided are a method and an apparatus for manufacturing a semiconductor device. The method comprises: forming a first wiring layer on a base substrate; forming an interlayer dielectric layer on the first wiring layer, with contact holes being provided in the interlayer dielectric layer; subjecting bottoms of the contact holes to a dry cleaning process; and forming a second wiring layer on the interlayer dielectric layer, wherein the second wiring layer is electrically connected to the first wiring layer via the contact holes.