公开(公告)号：US11264507B2

公开(公告)日：2022-03-01

申请号：US16078160

申请日：2017-12-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaolong He ,  Dongsheng Li ,  Shengguang Ban ,  Rui Huang ,  Dongcan Mi

IPC: H01L29/786 ,  H01L29/267 ,  H01L29/45 ,  H01L29/66 ,  H01L21/4763 ,  H01L27/12

Abstract: A thin film transistor and a method for manufacturing the same, an array substrate and an electronic device. The thin film transistor includes a gate, a gate insulator, an active layer, a source and a drain. A protective structure is disposed on a side of the source and the drain close to the gate.

公开(公告)号：US20200259034A1

公开(公告)日：2020-08-13

申请号：US16611377

申请日：2019-03-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Rui Huang ,  Huili WU

IPC: H01L31/105 ,  H01L31/18

Abstract: The present disclosure provides a detecting substrate, a manufacturing method thereof and a photoelectric detection device including the detecting substrate. The detecting substrate including: a substrate; and a photoelectric conversion element formed on the substrate, wherein the photoelectric conversion element is a PIN device comprising a first doped semiconductor layer, an intrinsic semiconductor layer and a second doped semiconductor layer, wherein a side wall of the intrinsic semiconductor layer is covered by an etching protective layer.