DISPLAY SUBSTRATE AND MANUFACTURE METHOD THEREOF, DISPLAY PANEL

    公开(公告)号:US20190013362A1

    公开(公告)日:2019-01-10

    申请号:US15745008

    申请日:2017-06-30

    Abstract: A display substrate, a manufacture method thereof and a display panel are provided. The display substrate includes: a first substrate; a plurality of pixel units included in the first substrate, each of the pixel units at least including a first sub-pixel unit, a second sub-pixel unit and a third sub-pixel unit; a medium film laminated layer arranged on the first substrate, the medium film laminated layer at least covering the first sub-pixel unit and the second sub-pixel unit; the medium film laminated layer is configured to eliminate blue light in a first wavelength range passing the medium film laminated layer, the medium film laminated layer includes at least one first medium film layer and at least one second medium film layer which are laminated alternately, and a refractive index of the first medium film layer is greater than a refractive index of the second medium film layer.

    METHODS OF MANUFACTURING THIN FILM TRANSISTOR, BIOMETRIC DEVICE, AND DISPLAY APPARATUS

    公开(公告)号:US20220037198A1

    公开(公告)日:2022-02-03

    申请号:US17278855

    申请日:2020-07-24

    Abstract: A method of manufacturing thin film transistor(s) includes: providing a monocrystalline silicon wafer, the monocrystalline silicon wafer including a first surface and a second surface that are opposite to each other; forming a bubble layer between the first surface and the second surface of the monocrystalline silicon wafer, the bubble layer dividing the monocrystalline silicon wafer into two portions arranged side by side in a direction perpendicular to the second surface, and a portion of the monocrystalline silicon wafer that is located between the bubble layer and the second surface being a monocrystalline silicon film having a target thickness; providing a substrate, and transferring the monocrystalline silicon film onto the substrate by breaking the monocrystalline silicon wafer at the bubble layer; and patterning the monocrystalline silicon film transferred to the substrate to form active layer(s) of the thin film transistor(s).

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