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公开(公告)号：US20190013219A1
公开(公告)日：2019-01-10
申请号：US15961753
申请日：2018-04-24
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Ming Wang
IPC: H01L21/67 , H01L21/324 , H01L21/687
Abstract: The present disclosure provides a film annealing apparatus and method. The film annealing apparatus includes: a carrying platform configured to carry a substrate formed with a film layer thereon; a heater configured to individually heat respective regions of the film layer such that the film layer is annealed; a carrier detector configured to detect carrier concentrations of the respective regions of the film layer; and a controller electrically connected with the carrier detector and the heater respectively and configured to, according to the carrier concentrations of the respective regions of the film layer detected by the carrier detector, adjust at least one of a heating temperature and a heating time of the heater for heating a corresponding one of the regions of the film layer such that the carrier concentrations of the respective regions of the annealed film layer become the same.
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公开(公告)号：US12261179B2
公开(公告)日：2025-03-25
申请号：US17898761
申请日：2022-08-30
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
IPC: H01L27/12 , H01L21/02 , H01L29/66 , H01L29/786
Abstract: The present disclosure provides a method for preparing an interlayer insulating layer and a method for manufacturing a thin film transistor, and a thin film transistor, belongs to the field of display technology, and can solve the problem of poor resistance to breakdown of the interlayer insulating layer in the related art. The method for preparing an interlayer insulating layer includes the following steps: forming a silicon oxide layer with a first reaction gas and forming a silicon nitride layer with a second reaction gas such that hydrogen content in the silicon nitride layer is less than or equal to hydrogen content in the silicon oxide layer.
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公开(公告)号：US12245466B2
公开(公告)日：2025-03-04
申请号：US17417334
申请日：2020-11-05
Inventor： Wei Li , Jingjing Xia , Bin Zhou , Yang Zhang , Guangyao Li , Wei Song , Xuanang Wang , Qinghe Wang , Liusong Ni , Jun Liu , Liangchen Yan , Ming Wang , Jingang Fang
IPC: H10K59/122 , H10K50/842 , H10K59/12 , H10K59/121 , H10K71/00
Abstract: The present disclosure provides an array substrate, a method for manufacturing the array substrate, a display panel and a display device. The array substrate includes: a substrate; a planarization layer on a side of the substrate; a pixel defining layer configured to define a pixel opening region and located on a side of the planarization layer away from the substrate; an anode in the pixel opening region and on a side of the planarization layer away from the substrate. The array substrate further includes an intermediate insulation layer between the planarization layer and the pixel defining layer. The intermediate insulation layer has a chemical polarity between a chemical polarity of the planarization layer and a chemical polarity of the pixel defining layer.
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公开(公告)号：US20210265392A1
公开(公告)日：2021-08-26
申请号：US17054823
申请日：2020-04-16
Inventor： Wei Song , Ce Zhao , Yuankui Ding , Ming Wang , Yingbin Hu , Qinghe Wang , Wei Li , Liusong Ni
IPC: H01L27/12 , H01L29/24 , H01L29/786 , H01L21/02 , H01L29/66
Abstract: This disclosure discloses an array substrate, and a production method, a display panel, and a display apparatus thereof. Particularly, this disclosure proposes a method of producing an array substrate, having the following steps: providing a substrate having a drive transistor region and a switch transistor region thereon; forming an preset layer for active layer on a side of the substrate; patterning the preset layer for active layer to form a drive active layer and a switch active layer, wherein an orthographic projection of the drive active layer on the substrate is located in the drive transistor region, an orthographic projection of the switch active layer on the substrate is located in the switch transistor region, and a carrier concentration in the drive active layer is less than a carrier concentration in the switch active layer.
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Patent Agency Ranking
公开(公告)号：US11751456B2
公开(公告)日：2023-09-05
申请号：US17812598
申请日：2022-07-14
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Dongfang Wang , Tongshang Su , Ming Wang , Ce Zhao , Bin Zhou
IPC: H10K59/35 , H10K59/126 , H10K59/121 , H10K102/10
CPC classification number: H10K59/351 , H10K59/126 , H10K59/1213 , H10K2102/103
Abstract: An OLED display substrate, a manufacturing method and a display device are provided. The OLED display substrate includes a base substrate and a plurality of pixel units arranged on the base substrate, each pixel unit includes a plurality of subpixel units, and each subpixel unit includes a switching TFT and a bottom-emission OLED, the OLED display substrate further includes a light-shielding layer arranged between the OLED and the switching TFT, and an orthogonal projection of the light-shielding layer onto the base substrate completely covers an orthogonal projection of a semiconductor region of the switching TFT onto the base substrate.
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公开(公告)号：US11737305B2
公开(公告)日：2023-08-22
申请号：US17260018
申请日：2020-05-27
Inventor： Wei Song , Ce Zhao , Yuankui Ding , Ming Wang , Ning Liu , Leilei Cheng , Junlin Peng , Yingbin Hu , Liusong Ni
IPC: H10K50/818 , H10K71/00 , H10K50/813 , H10K59/12 , H10K101/30 , H10K102/10 , H10K102/00
CPC classification number: H10K50/818 , H10K71/00 , H10K50/813 , H10K59/12 , H10K2101/30 , H10K2102/103 , H10K2102/3026
Abstract: A light-emitting device includes: an anode disposed on a base, and a cathode disposed on a side of the anode facing away from the base. The anode includes a light-reflecting sub-electrode and a light-transmitting sub-electrode located on a surface of the light-reflecting sub-electrode facing away from the base, and an orthographic projection of the light-transmitting sub-electrode on the base is located within a range of an orthographic projection of the light-reflecting sub-electrode on the base. The light-reflecting sub-electrode includes a metal pattern and a metal oxide pattern, and the metal oxide pattern is located in at least part of a region around the metal pattern.
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公开(公告)号：US10916568B2
公开(公告)日：2021-02-09
申请号：US15777118
申请日：2017-09-26
Abstract: A manufacturing method of a display substrate, an array substrate and a display device are provided. The method includes forming a first wire, a first insulation layer, a first and second metal layer, and a photoresist layer; forming a photoresist retained pattern above the first wire; forming a second and first metal layer retained pattern under the photoresist retained pattern; forming a second insulation layer with a thickness less than or equal to a sum of thicknesses of the first and second metal layer; the second insulation layer forming a fracture region at a boundary between a part covering the first insulation layer and another part covering the second metal layer retained pattern; removing the first and second metal layer retained patterns by a wet etch process to expose the first insulation layer; and forming a contact hole exposing the first wire.
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公开(公告)号：US10892284B2
公开(公告)日：2021-01-12
申请号：US16402191
申请日：2019-05-02
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
IPC: H01L23/544 , H01L27/12 , H01L21/768 , H01L27/32
Abstract: A display substrate, a manufacturing method thereof, and a display device are provided. According to embodiments of the present disclosure, the manufacturing method of a display substrate comprises: fabricating a gate electrode, a gate electrode insulating layer, and a semiconductor active layer sequentially on a base substrate; fabricating a first etching stopping layer and a second etching stopping layer on the base substrate with the semiconductor active layer fabricated thereon, wherein the first etching stopping layer is disposed in a display area of the display substrate, the second etching stopping layer is disposed in a peripheral area of the display substrate, and the second etching stopping layer is a non-transparent layer; and fabricating source/drain electrodes by a patterning process, on the base substrate with the first and second etching stopping layers fabricated thereon, wherein the second etching stopping layer is used as an alignment marker in fabricating the source/drain electrodes.
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公开(公告)号：US10553461B2
公开(公告)日：2020-02-04
申请号：US15961753
申请日：2018-04-24
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Ming Wang
IPC: C30B1/02 , H01L21/67 , H01L21/687 , H01L21/324 , C30B1/00
Abstract: The present disclosure provides a film annealing apparatus and method. The film annealing apparatus includes: a carrying platform configured to carry a substrate formed with a film layer thereon; a heater configured to individually heat respective regions of the film layer such that the film layer is annealed; a carrier detector configured to detect carrier concentrations of the respective regions of the film layer; and a controller electrically connected with the carrier detector and the heater respectively and configured to, according to the carrier concentrations of the respective regions of the film layer detected by the carrier detector, adjust at least one of a heating temperature and a heating time of the heater for heating a corresponding one of the regions of the film layer such that the carrier concentrations of the respective regions of the annealed film layer become the same.
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