公开(公告)号：US06531348B2

公开(公告)日：2003-03-11

申请号：US10000092

申请日：2001-12-04

申请人： Hae-Yeol Kim ,  Jong-Il Kim ,  Se-June Kim

发明人： Hae-Yeol Kim ,  Jong-Il Kim ,  Se-June Kim

IPC分类号： H01L2100

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L27/1277 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675

摘要： A method of crystallizing amorphous silicon includes forming an amorphous silicon layer over a substrate, forming a plurality of metal clusters on the amorphous silicon layer, and simultaneously applying a thermal treatment, an electric field, and a magnetic field to crystallize the amorphous silicon layer.