专利检索 ap:"BRIAN WAGNER" 第 3 页

21.

发明申请
Solid solution wide bandgap semiconductor materials 审中-公开
标题翻译：固溶体宽带隙半导体材料

公开(公告)号：US20080206121A1

公开(公告)日：2008-08-28

申请号：US12081636

申请日：2008-04-18

申请人： Narsingh Bahadur Singh , Brian Wagner , Mike Aumer , Darren Thomson , David Kahler , Andre Berghmans , David J. Knuteson

发明人： Narsingh Bahadur Singh , Brian Wagner , Mike Aumer , Darren Thomson , David Kahler , Andre Berghmans , David J. Knuteson

IPC分类号： C01B33/00 , C23C16/06

CPC分类号： C30B23/02 , C30B23/025 , C30B25/183 , C30B29/36 , C30B29/406

摘要： A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AIN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.

摘要翻译： 公开了一种用于在没有任何缓冲层的诸如（AIN）x（SiC）1（1-x）之类的合金膜上生长半导体晶体的衬底和方法。可以通过使用AlN和SiC粉末作为原料的气相沉积法在SiC衬底上形成（AIN）x（SiC）（1-x））合金膜。（AIN）x（SiC）（1-x））合金膜为GaN或SiC外延生长提供了更好的晶格匹配，并减少了具有更好晶格的外延生长的GaN中的缺陷匹配和化学。