INPUT CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE ENSURING ENABLED DATA INPUT BUFFER DURING DATA INPUT
    201.
    发明申请
    INPUT CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE ENSURING ENABLED DATA INPUT BUFFER DURING DATA INPUT 有权
    在数据输入期间保护启用数据输入缓冲器的半导体存储器件的输入电路

    公开(公告)号:US20090161446A1

    公开(公告)日:2009-06-25

    申请号:US12206020

    申请日:2008-09-08

    Applicant: Sang Hee LEE

    Inventor: Sang Hee LEE

    CPC classification number: G11C7/1078 G11C7/1027 G11C7/1084 G11C7/1087 G11C7/22

    Abstract: An input circuit of a semiconductor memory device that prevents data from being input into a data input buffer prior to the enablement of the data input buffer. The input circuit includes an input buffer enabling control unit that generates an input buffer enabling signal which is enabled before a point at which data is input and which has an enabling period of at least a predetermined burst length. A data input buffer is controlled by the input buffer enabling signal, and the data input buffer buffers and outputs the data during the enabling period of the input buffer enabling signal.

    Abstract translation: 一种半导体存储器件的输入电路,其在数据输入缓冲器启用之前防止数据输入到数据输入缓冲器中。 该输入电路包括一个输入缓冲器使能控制单元,该输入缓冲器使能控制单元产生一个输入缓冲器使能信号,该信号在数据被输入的点之前使能,并且具有至少一个预定突发长度的允许周期。 数据输入缓冲器由输入缓冲器使能信号控制,数据输入缓冲器在输入缓冲器使能信号的使能期间缓冲并输出数据。

    Semiconductor device and operation method thereof

    公开(公告)号:US20090121768A1

    公开(公告)日:2009-05-14

    申请号:US12157240

    申请日:2008-06-09

    Applicant: Sang-Hee Lee

    Inventor: Sang-Hee Lee

    CPC classification number: H03K5/135 H03K5/1565

    Abstract: Semiconductor device and operation method thereof includes an aspect of the present invention, there is provided a clock generator configured to receive an external clock signal to generate a first clock signal corresponding to a rising edge of the external clock and a second clock signal corresponding to a falling edge of the external clock, a drive control signal generator configured to restrict an activation period of the first clock signal within a deactivation period of the second clock signal to generate a first drive control signal, and restrict an activation period of the second clock signal within a deactivation period of the first clock signal to generate a second drive control signal and an output driver configured to receive a drive data in response to the first and second drive control signal to drive an output terminal in response to the drive data.

    Method and apparatus for angular-directed spatial deinterlacer
    205.
    发明申请
    Method and apparatus for angular-directed spatial deinterlacer 有权
    角度定向空间解交织器的方法和装置

    公开(公告)号:US20080158415A1

    公开(公告)日:2008-07-03

    申请号:US11646763

    申请日:2006-12-27

    CPC classification number: H04N7/012 H04N7/0142

    Abstract: In one embodiment, an apparatus and method for an angular-directed spatial deinterlacer are disclosed. In one embodiment, the method comprises calculating a cost measure for each of multiple angle candidates for a target pixel block to be deinterlaced in a spatial-only domain, determining a horizontal angle measure for the target pixel block, establishing a global minimum angle from the multiple angle candidates by determining the lowest cost measure from the multiple angle candidates, establishing a local minimum angle from the multiple angle candidates by sifting through the angle candidates in a hierarchical manner, and filtering the global minimum angle and the local minimum angle to create a value for interpolating the target pixel block for deinterlacing. Other embodiments are also described.

    Abstract translation: 在一个实施例中,公开了一种用于角定向空间解交错器的装置和方法。 在一个实施例中,该方法包括计算针对要在空间域中去隔行扫描的目标像素块的多个角度候选中的每一个的成本测量,确定目标像素块的水平角度度量,从 通过从多个角度候选确定最低成本度量来确定多个角度候选,通过以分级方式筛选角度候选来从多个角度候选建立局部最小角度,以及过滤全局最小角度和局部最小角度以创建 内插用于去隔行扫描的目标像素块的值。 还描述了其它实施例。

    MOTION DETECTION FOR VIDEO PROCESSING
    206.
    发明申请
    MOTION DETECTION FOR VIDEO PROCESSING 有权
    视频处理运动检测

    公开(公告)号:US20080152194A1

    公开(公告)日:2008-06-26

    申请号:US11614021

    申请日:2006-12-20

    CPC classification number: G06T7/269 G06T7/254 G06T2207/10016

    Abstract: Various embodiments for performing motion detection for video processing are described. In one or more embodiments, motion detection may be performed by computing a temporal difference measurement, a local spatial complexity measurement, and a content dependent motion detection value based on the temporal difference measurement and the local spatial complexity measurement. In some implementations, the content dependent motion detection value may comprise a division of the temporal difference measurement by the local spatial complexity measurement. In other implementations, an approximated content dependent motion detection value may be computed without division to reduce computational complexity. The content dependent motion detection value may be used to perform various adaptive post-processing operations such as for de-interlacing, noise reduction, frame rate conversion, and so forth. Other embodiments are described and claimed.

    Abstract translation: 描述了用于执行视频处理的运动检测的各种实施例。 在一个或多个实施例中,可以通过基于时间差测量和局部空间复杂性测量来计算时间差测量,局部空间复杂度测量和依赖于内容的运动检测值来执行运动检测。 在一些实现中,依赖于内容的运动检测值可以包括通过局部空间复杂度测量对时间差测量进行除法。 在其他实现中,可以不分割地计算近似内容相关的运动检测值,以减少计算复杂度。 内容相关运动检测值可以用于执行各种自适应后处理操作,例如用于去隔行扫描,降噪,帧速率转换等。 描述和要求保护其他实施例。

    Method of fabricating nano SOI wafer and nano SOI wafer fabricated by the same
    207.
    发明授权
    Method of fabricating nano SOI wafer and nano SOI wafer fabricated by the same 有权
    制造纳米SOI晶片和纳米SOI晶片的方法

    公开(公告)号:US07338882B2

    公开(公告)日:2008-03-04

    申请号:US11084033

    申请日:2005-03-21

    CPC classification number: H01L21/76254 Y10S438/959

    Abstract: A method of fabricating a nano silicon on insulator (SOI) wafer having an excellent thickness evenness without performing a chemical mechanical polishing (CMP) and a wafer fabricated by the same are provided. The provided method includes preparing a bond wafer and a base wafer, and forming a dielectric on at least on surface of the bond wafer. Thereafter, an impurity ion implantation unit is formed by implanting impurity ions into the bond wafer to a predetermined depth from the surface of the bond wafer at a low voltage. The dielectric of the bond wafer and the base wafer contact each other in order to be bonded. Next, a thermal process of low temperature is performed to cleave the impurity ion implantation unit of the bond wafer. In addition, the cleaved surface of the bond wafer bonded to the base wafer is etched to form a nano scale device region. Here, the cleaved surface may be etched by performing a hydrogen surface process and a wet etching.

    Abstract translation: 提供了不进行化学机械抛光(CMP)和由其制造的晶片的制造具有优异的厚度均匀性的纳米绝缘体(SOI)晶片的方法。 所提供的方法包括制备接合晶片和基底晶片,并且在接合晶片的至少一个表面上形成电介质。 此后,通过以低电压将杂质离子注入接合晶片到接合晶片的表面至预定深度来形成杂质离子注入单元。 接合晶片和基底晶片的电介质彼此接触以便结合。 接下来,进行低温的热处理,以切割接合晶片的杂质离子注入单元。 此外,蚀刻结合到基底晶片的接合晶片的切割表面以形成纳米级器件区域。 这里,可以通过进行氢表面处理和湿蚀刻来蚀刻裂开的表面。

    Method for providing video source list and video apparatus
    208.
    发明申请
    Method for providing video source list and video apparatus 审中-公开
    提供视频源列表和视频设备的方法

    公开(公告)号:US20070268936A1

    公开(公告)日:2007-11-22

    申请号:US11634864

    申请日:2006-12-07

    CPC classification number: H04N5/44513 H04N21/436 H04N21/482

    Abstract: A method for providing a video source list and a video apparatus are provided. The video apparatus comprises a combiner which combines an external input list with a video to be displayed, the external input list including information regarding external inputs of the video apparatus and a controller which generates the external input list, and controls the combiner, wherein the controller selectively changes a display order in which the information regarding external inputs is arranged in the external input list. Accordingly, it is possible to change the order in which the information regarding external inputs arranged on the external input list is displayed according to the desires of a user, and thus, the user can choose external inputs more rapidly and conveniently.

    Abstract translation: 提供了一种用于提供视频源列表和视频设备的方法。 视频装置包括组合外部输入列表和要显示的视频的组合器,外部输入列表包括关于视频设备的外部输入的信息和产生外部输入列表的控制器,并且控制组合器,其中控制器 选择性地改变其中关于外部输入的信息被布置在外部输入列表中的显示顺序。 因此,可以根据用户的需要改变其中显示外部输入列表上的外部输入的信息的顺序,因此用户可以更快捷方便地选择外部输入。

    Semiconductor memory device
    209.
    发明申请
    Semiconductor memory device 失效
    半导体存储器件

    公开(公告)号:US20070070785A1

    公开(公告)日:2007-03-29

    申请号:US11528641

    申请日:2006-09-28

    Applicant: Sang-Hee Lee

    Inventor: Sang-Hee Lee

    Abstract: A semiconductor memory device changes a pulse width of an over driving signal according to operation modes, which differ by a degree of accessing memory banks during an over driving operation. An over driver supplies an RTO line of the bit line sense amplifier with an over driving voltage in response to the over driving signal and an over driving signal generator changes a pulse width of the over driving signal according to the operation modes. An increase in the VCORE due to excess supply voltage VDD in the over driving operation is prevented.

    Abstract translation: 半导体存储器件根据操作模式改变过驱动信号的脉冲宽度,该操作模式在过驱动操作期间存取存储体的程度不同。 过驱动器响应于过驱动信号而提供具有过驱动电压的位线读出放大器的RTO线,并且过驱动信号发生器根据操作模式改变过驱动信号的脉冲宽度。 防止过驱动时电源电压VDD过大导致的VCORE增加。

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