Abstract:
An input circuit of a semiconductor memory device that prevents data from being input into a data input buffer prior to the enablement of the data input buffer. The input circuit includes an input buffer enabling control unit that generates an input buffer enabling signal which is enabled before a point at which data is input and which has an enabling period of at least a predetermined burst length. A data input buffer is controlled by the input buffer enabling signal, and the data input buffer buffers and outputs the data during the enabling period of the input buffer enabling signal.
Abstract:
Semiconductor device and operation method thereof includes an aspect of the present invention, there is provided a clock generator configured to receive an external clock signal to generate a first clock signal corresponding to a rising edge of the external clock and a second clock signal corresponding to a falling edge of the external clock, a drive control signal generator configured to restrict an activation period of the first clock signal within a deactivation period of the second clock signal to generate a first drive control signal, and restrict an activation period of the second clock signal within a deactivation period of the first clock signal to generate a second drive control signal and an output driver configured to receive a drive data in response to the first and second drive control signal to drive an output terminal in response to the drive data.
Abstract:
A backlight assembly comprises a light source, and a chassis that receives the light source, wherein the chassis includes a body layer, a metal reflecting layer formed on the body layer to reflect light generated from the light source, an adhesive layer formed between the body layer and the metal reflecting layer, and a protecting layer formed on the metal reflecting layer.
Abstract:
Disclosed is a moon grid for transmission electron microscopy tomography, including a mesh sheet for protecting an upper objects and a support film formed on the mesh sheet and having nanoparticles dispersed throughout, in which the nanoparticles dispersed throughout the support film are used as reference points in the reconstruction of two-dimensional transmission electron microscopy images into a three-dimensional image, thus omitting a process of attaching markers in the course of preparation of a sample and easily forming reference points even on a sample to which it is impossible to attach markers. A method of fabricating such a moon grid is also provided.
Abstract:
In one embodiment, an apparatus and method for an angular-directed spatial deinterlacer are disclosed. In one embodiment, the method comprises calculating a cost measure for each of multiple angle candidates for a target pixel block to be deinterlaced in a spatial-only domain, determining a horizontal angle measure for the target pixel block, establishing a global minimum angle from the multiple angle candidates by determining the lowest cost measure from the multiple angle candidates, establishing a local minimum angle from the multiple angle candidates by sifting through the angle candidates in a hierarchical manner, and filtering the global minimum angle and the local minimum angle to create a value for interpolating the target pixel block for deinterlacing. Other embodiments are also described.
Abstract:
Various embodiments for performing motion detection for video processing are described. In one or more embodiments, motion detection may be performed by computing a temporal difference measurement, a local spatial complexity measurement, and a content dependent motion detection value based on the temporal difference measurement and the local spatial complexity measurement. In some implementations, the content dependent motion detection value may comprise a division of the temporal difference measurement by the local spatial complexity measurement. In other implementations, an approximated content dependent motion detection value may be computed without division to reduce computational complexity. The content dependent motion detection value may be used to perform various adaptive post-processing operations such as for de-interlacing, noise reduction, frame rate conversion, and so forth. Other embodiments are described and claimed.
Abstract:
A method of fabricating a nano silicon on insulator (SOI) wafer having an excellent thickness evenness without performing a chemical mechanical polishing (CMP) and a wafer fabricated by the same are provided. The provided method includes preparing a bond wafer and a base wafer, and forming a dielectric on at least on surface of the bond wafer. Thereafter, an impurity ion implantation unit is formed by implanting impurity ions into the bond wafer to a predetermined depth from the surface of the bond wafer at a low voltage. The dielectric of the bond wafer and the base wafer contact each other in order to be bonded. Next, a thermal process of low temperature is performed to cleave the impurity ion implantation unit of the bond wafer. In addition, the cleaved surface of the bond wafer bonded to the base wafer is etched to form a nano scale device region. Here, the cleaved surface may be etched by performing a hydrogen surface process and a wet etching.
Abstract:
A method for providing a video source list and a video apparatus are provided. The video apparatus comprises a combiner which combines an external input list with a video to be displayed, the external input list including information regarding external inputs of the video apparatus and a controller which generates the external input list, and controls the combiner, wherein the controller selectively changes a display order in which the information regarding external inputs is arranged in the external input list. Accordingly, it is possible to change the order in which the information regarding external inputs arranged on the external input list is displayed according to the desires of a user, and thus, the user can choose external inputs more rapidly and conveniently.
Abstract:
A semiconductor memory device changes a pulse width of an over driving signal according to operation modes, which differ by a degree of accessing memory banks during an over driving operation. An over driver supplies an RTO line of the bit line sense amplifier with an over driving voltage in response to the over driving signal and an over driving signal generator changes a pulse width of the over driving signal according to the operation modes. An increase in the VCORE due to excess supply voltage VDD in the over driving operation is prevented.
Abstract:
A light-guide plate includes a body for guiding incident light, and at least an inserting portion penetrating a portion of the body, wherein at least a light source for providing the light-guide plate with the light is inserted into the inserting portion. The inserting portion can be formed at an end portion of the body. A side surface of the body can be recessed to form the inserting portion. A light-diffusing pattern can be formed at a side surface of the inserting portion, and the side surface of the inserting portion is substantially parallel with the side surface of the body.