公开(公告)号：US20240422997A1

公开(公告)日：2024-12-19

申请号：US18700819

申请日：2022-10-11

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Ahmed M. ELTAWIL ,  Mohammed E. FOUDA ,  Boon S. OOI ,  Khaled Nabil SALAMA ,  Mani Teja VIJJAPU

IPC: H10K10/10 ,  G06N3/049 ,  H10K10/84 ,  H10K19/00 ,  H10K30/82 ,  H10K39/30 ,  H10K85/50 ,  H10K102/10

Abstract: A capacitive photoresistor array having frequency-independent capacitance includes first and second electrodes and a composite material including a perovskite and a terpolymer. The composite material is sandwiched between the first electrode and the second electrode, and a capacitance of the array changes proportionally with a light intensity for visible light and is independent of light frequency due to a combination of the perovskite and the terpolymer.

公开(公告)号：US12089424B2

公开(公告)日：2024-09-10

申请号：US17423814

申请日：2019-01-16

Applicant: THE REGENTS OF THE UNIVERSITY OF MICHIGAN

Inventor： Lingjie J. Guo ,  Qingyu Cui

IPC: H01L31/00 ,  H10K30/10 ,  H10K30/82 ,  H10K39/30

CPC classification number: H10K30/10 ,  H10K30/82 ,  H10K39/30

Abstract: In various aspects, the present disclosure provides photodetector devices that may be provided in arrays. The photodetector includes a first electrode, a second electrode, and a photoactive layer assembly disposed therebetween. The photoactive layer assembly comprises a first charge transport layer, a second charge transport layer, and an amorphous silicon (a-Si) material substantially free of doping and being substantially free of doping disposed between the first charge transport layer and the second charge transport layer. The photodetector device transmits light in a predetermined range of wavelengths and is capable of generating detectable photocurrent when light having a light intensity of less than or equal to about 50 Lux is directed towards the photodetector device.

公开(公告)号：US20240049488A1

公开(公告)日：2024-02-08

申请号：US18262457

申请日：2021-12-21

Applicant: ASCA GmbH

Inventor： Ralph Pätzold ,  Pavel Schilinsky ,  Bas Cedric Van Der Wiel

IPC: H10K39/18 ,  H10K39/30 ,  G06F3/044

CPC classification number: H10K39/18 ,  H10K39/30 ,  G06F3/0445 ,  H10K30/88

Abstract: A semiconductor module has a layer structure and at least one capacitive sensor. The layer structure is formed with an upper electrode layer, a lower electrode layer, and an active layer arranged between the electrode layers. The active layer is made of a semiconductor material. The capacitive sensor has a measuring electrode which is integrated into the layer structure. There is also described a device which has such a semiconductor module and a method for producing such a semiconductor module.

公开(公告)号：US11735343B2

公开(公告)日：2023-08-22

申请号：US16293212

申请日：2019-03-05

Applicant: International Business Machines Corporation

Inventor： Oki Gunawan ,  Wang Zhou

IPC: H01F7/02 ,  H01L31/02 ,  G01N27/72 ,  H10K39/30

CPC classification number: H01F7/0273 ,  G01N27/72 ,  H01L31/02024 ,  H10K39/30

Abstract: Techniques regarding operating one or more parallel dipole line traps are provided. For example, one or more embodiments described herein can comprise a system, which can comprise a parallel dipole line trap comprising a diamagnetic object positioned between a plurality of dipole line magnets. The system can also comprise a split photodetector sensor positioned adjacent to the parallel dipole line trap. The split photodetector sensor can detect a displacement of the diamagnetic object.