公开(公告)号：US20190148120A1

公开(公告)日：2019-05-16

申请号：US16191545

申请日：2018-11-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinsuke OKA

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: A heater controller controls power supplied to a heater capable of adjusting the temperature of a placement surface such that the heater reaches a set temperature. A temperature monitor measures the power supplied in the non-ignited state where the plasma is not ignited and in the transient state where the power supplied to the heater decreases after the plasma is ignited, while the power is controlled such that the temperature of the heater becomes constant. A parameter calculator calculates a heat input amount and the thermal resistance by using the power supplied in the non-ignited state and in the transient state to perform a fitting on a calculation model for calculating the power supplied in the transient state. A set temperature calculator calculates the set temperature of the heater at which the wafer reaches the target temperature, using the heat input amount and thermal resistance.

公开(公告)号：US20240087855A1

公开(公告)日：2024-03-14

申请号：US18510680

申请日：2023-11-16

Applicant: Tokyo Electron Limited

Inventor： Shinsuke OKA

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32642 ,  H01J37/32449 ,  H01J37/32669 ,  H01J37/32724 ,  H01J37/32926 ,  H01L21/67248 ,  H01L21/67253 ,  H01J2237/3321

Abstract: In a plasma processing apparatus, a mounting table includes a heater for adjusting a temperature of a mounting surface mounting thereon a consumable part consumed by plasma processing. A heater control unit controls a supply power to the heater such that the heater reaches a setting temperature. A measurement unit measures, while controlling the supply power to the heater such that the temperature of the heater becomes constant, the supply powers in a non-ignition state where plasma is not ignited and in a transient state where the supply power is decreased after the plasma is ignited. A parameter calculation unit calculates a thickness of the consumable part by performing fitting with a calculation model, which has the thickness of the consumable part as a parameter and calculates the supply power in the transient state, by using the measured supply powers in the non-ignition state and in the transient state.

公开(公告)号：US20230087979A1

公开(公告)日：2023-03-23

申请号：US18073171

申请日：2022-12-01

Applicant: Tokyo Electron Limited

Inventor： Shinsuke OKA

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: A heater controller controls power supplied to a heater capable of adjusting the temperature of a placement surface such that the heater reaches a set temperature. A temperature monitor measures the power supplied in the non-ignited state where the plasma is not ignited and in the transient state where the power supplied to the heater decreases after the plasma is ignited, while the power is controlled such that the temperature of the heater becomes constant. A parameter calculator calculates a heat input amount and the thermal resistance by using the power supplied in the non-ignited state and in the transient state to perform a fitting on a calculation model for calculating the power supplied in the transient state. A set temperature calculator calculates the set temperature of the heater at which the wafer reaches the target temperature, using the heat input amount and thermal resistance.

公开(公告)号：US20220189748A1

公开(公告)日：2022-06-16

申请号：US17548594

申请日：2021-12-13

Applicant: Tokyo Electron Limited

Inventor： Shinsuke OKA

IPC: H01J37/32

Abstract: A plasma processing apparatus is provided. The plasma processing apparatus comprises: a dielectric member having a placement surface on which an object to be processed is placed and a back surface opposite to the placement surface, and having a first through-hole penetrating through the placement surface and the back surface; a mounting table having a support surface for supporting the dielectric member and a base having a second through-hole communicating with the first through-hole; and an embedded member disposed in the first through-hole and the second through-hole, wherein the embedded member includes a first embedded member disposed in the first through-hole and a second embedded member disposed in the second through-hole, and the rigidity of the second embedded member is lower than the rigidity of the first embedded member.

公开(公告)号：US20220084850A1

公开(公告)日：2022-03-17

申请号：US17467880

申请日：2021-09-07

Applicant: Tokyo Electron Limited

Inventor： Shinsuke OKA

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/3065

Abstract: A plasma processing apparatus includes: a substrate support on which a substrate is supported; a detector configured to detect a temperature of the substrate support; a measurement unit configured to measure, by the detector, a temperature change of the substrate support while the temperature of the substrate support is increasing after igniting plasma or while the temperature of the substrate support is decreasing after the plasma processing is completed and the plasma is extinguished, based on the temperature of the substrate support detected by the detector; and an acquisition unit configured to acquire a thermal resistance between the substrate and the substrate support based on the temperature change of the substrate support measured by the measurement unit.

公开(公告)号：US20210143044A1

公开(公告)日：2021-05-13

申请号：US17088123

申请日：2020-11-03

Applicant: Tokyo Electron Limited

Inventor： Shinsuke OKA ,  Kenya IWASAKI ,  Hideto SAITO

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/687

Abstract: A plasma processing apparatus includes: a vacuumable processing container; a lower electrode provided inside the processing container and for placing a substrate thereon; an edge ring arranged to surround a periphery of the substrate; an electrostatic chuck provided on the lower electrode to attract the substrate and the edge ring; a heat-transfer-gas supply part for supplying a heat transfer gas between the electrostatic chuck and the edge ring through one or more first through-holes respectively formed in the lower electrode and the electrostatic chuck; and a heat-transfer-gas exhaust part for exhausting the heat transfer gas between the electrostatic chuck and the edge ring through one or more second through-holes respectively formed in the lower electrode and the electrostatic chuck. Electrostatic chuck openings of the second through-holes are formed radially inward of those of the first through-holes between the electrostatic chuck and the edge ring.

公开(公告)号：US20180211853A1

公开(公告)日：2018-07-26

申请号：US15874106

申请日：2018-01-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinsuke OKA

IPC: H01L21/67 ,  H01L21/66

CPC classification number: H01L21/67103 ,  H01J37/32724 ,  H01L21/67069 ,  H01L21/67248 ,  H01L21/67253 ,  H01L22/20

Abstract: Disclosed is a substrate processing apparatus including: a placing table having a placement surface and provided with a heater in each divided region obtained by dividing the placement surface; a calculation unit that calculates a target temperature of the heater in each divided region in which a critical dimension at a predetermined measurement point satisfies a predetermined condition, using a prediction model that predicts the critical dimension of the measurement point by using a temperature of the heater in each divided region as a parameter and taking into consideration an influence of a temperature of a heater in a divided region other than a divided region including the measurement point in accordance with a distance between the measurement point and the other divided region; and a heater controller that controls the heater in each divided region to reach the target temperature when the substrate processing is performed on the substrate.