Abstract:
A plasma processing apparatus includes an external circuit electrically connected through a line to an electrical component in a processing chamber and a filter provided on the line to attenuate or block noise introduced into the line from the electrical component toward the external circuit. The filter includes a coil having constant diameter and coil length; a tubular outer conductor accommodating the coil and forming a distributed constant line in which parallel resonance occurs at multiple frequencies in combination with the coil; and a movable member for changing each winding gap of the coil and provided in an effective section where a specific one or a plurality of parallel resonance frequencies is shifted to a higher frequency side or a lower frequency side in frequency-impedance characteristics of the filter by changing the winding gap of the coil in the effective section in a longitudinal direction of the coil.
Abstract:
A substrate support for use in a reaction chamber includes a base, and an in-situ electrostatic chuck. The chuck includes a first electrode in an upper portion of the chuck that is configured to hold a wafer to an upper surface of the upper portion by a first electrostatic attractive force under a condition of a first voltage is applied to the first electrode, and a second electrode that opposes an upper surface of the base and is configured to hold the chuck to the base by a second electrostatic attractive force under a condition that a second voltage is applied to the second electrode. Under a condition that the second voltage is not supplied to the second electrode, the second electrostatic attractive force is not present and the chuck is freed to be replaced in-situ without also removing the base and without exposing the reaction chamber to external atmosphere.
Abstract:
A substrate processing system is disclosed. The system comprises a first chamber having a first substrate transfer port; a second chamber having a second substrate transfer port and configured to perform substrate processing; a connecting member that allows the first substrate transfer port and the second substrate transfer port to communicate with each other; a heat shield portion disposed along the second transfer port in cross-sectional view and configured to thermally block the first chamber and the second chamber from each other; and a protective member disposed between the heat shield portion and the second transfer port and configured to prevent deterioration of the heat shield portion during substrate processing in the second chamber.
Abstract:
A plasma processing apparatus includes an external circuit electrically connected through a line to an electrical component in a processing chamber and a filter provided on the line to attenuate or block noise introduced into the line from the electrical component toward the external circuit. The filter includes a coil having constant diameter and coil length; a tubular outer conductor accommodating the coil and forming a distributed constant line in which parallel resonance occurs at multiple frequencies in combination with the coil; and a movable member for changing each winding gap of the coil and provided in an effective section where a specific one or a plurality of parallel resonance frequencies is shifted to a higher frequency side or a lower frequency side in frequency-impedance characteristics of the filter by changing the winding gap of the coil in the effective section in a longitudinal direction of the coil.
Abstract:
A method of manufacturing an electrostatic chuck includes providing a dielectric substrate having a surface which is constituted by a bottom face, and a plurality of projecting portions protruding from the bottom face, the plurality of projecting portions including top faces to come in contact with the processing target object, and side faces extending from the bottom face to the top faces, respectively; and forming a protective film made of yttrium oxide on the side faces of the plurality of projecting portions and the bottom face such that the top faces are exposed.
Abstract:
A distance between the surface of the base member and the electrostatic chuck having the heater pattern formed on a bottom surface thereof can be uniformized. A bonding method of bonding an electrostatic chuck and a base member to each other includes forming a filling member 30 by covering irregularities of a heater pattern 9a formed on a bottom surface 61 of the electrostatic chuck 9 facing the base member 10; grinding a base member contact surface 62 of the filling member 30 facing the base member 10; and bonding the ground base member contact surface 62 of the filling member 30 to the base member 10 with an adhesive layer 31 provided therebetween.
Abstract:
A transfer device for simultaneously or separately transferring a wafer and a consumable part having a circular shape is disclosed. The consumable part is disposed in a wafer processing module, and the outer diameter of the consumable part is larger than the outer diameter of the wafer. The transfer device comprises an end effector configured to place the wafer and the consumable part thereon simultaneously or separately, an arm configured to move the end effector, and a controller configured to control the arm, to place the consumable part on the end effector such that the center of gravity of the consumable part coincides with a first position when transferring the consumable part, and to place the wafer on the end effector such that the center of gravity of the wafer coincides with a second position between the first position and front ends of the end effector when transferring the wafer.
Abstract:
A stage on which a substrate is disposed includes: a base embedded with an adsorption electrode therein; a focus ring provided above the adsorption electrode and adsorbed and held on the base; and a deposit control ring provided radially inside the focus ring on the base. A gap is formed between the focus ring and the deposit control ring in a radial direction to separate the focus ring and the deposit control ring.
Abstract:
Disclosed is a stage including: an electrostatic chuck having a substrate placement surface on which a substrate is placed; and an electrostatic chuck placement plate on which the electrostatic chuck is placed. The electrostatic chuck and the electrostatic chuck placement plate are fastened by a plurality of first fasteners from a side of the electrostatic chuck placement plate, and the stage is fastened to a support provided on an opposite side of the electrostatic chuck of the electrostatic chuck placement plate by a plurality of second fasteners on a radially outer side of the placement surface.
Abstract:
A placing table on an embodiment includes a supporting member and a base. The supporting member includes a placing region provided with a heater, and an outer peripheral region surrounding the placing region. The base includes a first region supporting the placing region thereon, and a second region surrounding the first region. In the second region, through holes are formed. Wirings electrically connected to the heater passes through the through holes of the second region.