公开(公告)号：US20150129987A1

公开(公告)日：2015-05-14

申请号：US14080313

申请日：2013-11-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jung-Chi JENG ,  I-Chih CHEN ,  Wen-Chang KUO ,  Ying-Hao CHEN ,  Ru-Shang HSIAO ,  Chih-Mu HUANG

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7833 ,  H01L29/0649 ,  H01L29/6659

Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and an isolation structure in the semiconductor substrate and surrounding an active region of the semiconductor substrate. The semiconductor device also includes a gate over the semiconductor substrate, and the gate has an intermediate portion over the active region and two end portions connected to the intermediate portion, and the end portions are over the isolation structure. The semiconductor device further includes a support film over the isolation structure and covering the isolation structure and at least one of the end portions of the gate. The support film exposes the active region and the intermediate portion of the gate.

Abstract translation: 提供了用于形成半导体器件的机构的实施例。 半导体器件包括半导体衬底和半导体衬底中的隔离结构，并围绕半导体衬底的有源区。 半导体器件还包括半导体衬底上的栅极，并且栅极具有在有源区上方的中间部分和连接到中间部分的两个端部，并且端部在隔离结构上方。 半导体器件还包括隔离结构上的支撑膜，并覆盖隔离结构和栅极的至少一个端部。 支撑膜暴露栅极的有源区域和中间部分。