公开(公告)号：US20150243697A1

公开(公告)日：2015-08-27

申请号：US14192168

申请日：2014-02-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Volume CHIEN ,  Yu-Heng CHENG ,  Fu-Tsun TSAI ,  Hsi-Jung WU ,  Chi-Cherng JENG

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14685

Abstract: Embodiments of the disclosure provide an image sensor device. The image sensor device includes a semiconductor substrate. The semiconductor substrate has a front surface, a back surface opposite to the front surface, a light-sensing region close to the front surface, and a trench adjacent to the light-sensing region. The image sensor device includes a reflective layer positioned on an inner wall of the trench, wherein the reflective layer has a light reflectivity ranging from about 70% to about 100%.

Abstract translation: 本公开的实施例提供了一种图像传感器装置。 图像传感器装置包括半导体衬底。 半导体衬底具有前表面，与前表面相反的后表面，靠近前表面的感光区域和与光感测区域相邻的沟槽。 图像传感器装置包括位于沟槽的内壁上的反射层，其中反射层的光反射率为约70％至约100％。

公开(公告)号：US20150123225A1

公开(公告)日：2015-05-07

申请号：US14073580

申请日：2013-11-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Volume CHIEN ,  Su-Hua CHANG ,  Chia-Yu WEI ,  Zen-Fong HUANG ,  Chi-Cherng JENG

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14687 ,  H01L31/02164

Abstract: A backside illuminated image sensor device with a shielding layer and a manufacturing method thereof are provided. In the backside illuminated image senor device, a patterned conductive shielding layer is formed on a dielectric layer on a backside surface of a semiconductor substrate and surrounding a pixel array on a front side surface of the semiconductor substrate.

Abstract translation: 提供了具有屏蔽层的背面照明图像传感器装置及其制造方法。 在背面照明图像传感器装置中，在半导体衬底的背面上的电介质层上形成图案化的导电屏蔽层，并围绕半导体衬底的前侧表面上的像素阵列。

公开(公告)号：US20170098675A1

公开(公告)日：2017-04-06

申请号：US15380764

申请日：2016-12-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume CHIEN ,  Yun-Wei CHENG ,  Shiu-Ko JANGJIAN ,  Zhe-Ju LIU ,  Kuo-Cheng LEE ,  Chi-Cherng JENG

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L31/02164 ,  H01L31/0232

Abstract: A method for forming an image sensor device is provided. The method includes forming a photodetector in a semiconductor substrate and forming a shielding layer over the semiconductor substrate. The method also includes forming a dielectric layer over the shielding layer and partially removing the dielectric layer to form a recess. The method further includes partially removing the shielding layer through the recess. In addition, the method includes forming a filter in the recess after the shielding layer is partially removed.

公开(公告)号：US20150179690A1

公开(公告)日：2015-06-25

申请号：US14135042

申请日：2013-12-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Volume CHIEN ,  Fu-Cheng CHANG ,  Yi-Hsing CHU ,  Shiu-Ko JANGJIAN ,  Chi-Cherng JENG

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/1463 ,  H01L27/1464

Abstract: Embodiments of mechanisms for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate and an isolation structure in the semiconductor substrate. The image sensor device also includes an active region in the semiconductor substrate and surrounded by the isolation structure. The active region includes a light sensing region and a doped region, and the doped region has a horizontal length and a vertical length. A ratio of the horizontal length to the vertical length is in a range from about 1 to about 4.

Abstract translation: 提供了用于形成图像传感器装置的机构的实施例。 图像传感器装置包括半导体衬底和半导体衬底中的隔离结构。 图像传感器装置还包括半导体衬底中的有源区并被隔离结构包围。 有源区包括光感测区和掺杂区，掺杂区具有水平长度和垂直长度。 水平长度与垂直长度的比率在约1至约4的范围内。

公开(公告)号：US20150171136A1

公开(公告)日：2015-06-18

申请号：US14105063

申请日：2013-12-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume CHIEN ,  Zen-Fong HUANG ,  Chia-Yu WEI ,  Chi-Cherng JENG ,  Hsin-Chi CHEN

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14689

Abstract: A backside illuminated CMOS image sensor and a manufacturing method thereof are provided. Embedded micro-lenses disposed respectively on concave surfaces of a buffer oxide layer, wherein the concave surfaces are positioned to respectively align with photodiodes of pixel array of the CMOS image sensor. The embedded micro-lenses can confine incident light to the photodiodes to reduce optical crosstalk between adjacent pixels.

Abstract translation: 提供背面照明CMOS图像传感器及其制造方法。 分别设置在缓冲氧化物层的凹面上的嵌入式微透镜，其中凹面被分别对准与CMOS图像传感器的像素阵列的光电二极管对准。 嵌入式微透镜可以将入射光限制在光电二极管上，以减少相邻像素之间的光学串扰。