公开(公告)号：US20220246522A1

公开(公告)日：2022-08-04

申请号：US17723116

申请日：2022-04-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Bo Liao ,  Wei Ju LEE ,  Cheng-Ting CHUNG ,  Hou-Yu CHEN ,  Chun-Fu CHENG ,  Kuan-Lun CHENG

IPC: H01L23/522 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/78

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a first vertical structure and a second vertical structure formed over the substrate, and a conductive rail structure between the first and second vertical structures. A top surface of the conductive rail structure can be substantially coplanar with top surfaces of the first and the second vertical structures.