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公开(公告)号：US10861547B1
公开(公告)日：2020-12-08
申请号：US16417705
申请日：2019-05-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chao-Yang Chen , Cheng-Jun Wu , Chun-Yang Tsai , Kuo-Ching Huang
Abstract: In some embodiments, the present disclosure relates to a method of operation a resistive random access memory (RRAM) cell, comprising the performing of a reset operation to the RRAM cell. A first voltage bias is applied to the RRAM cell. The first voltage bias has a first polarity. The application of the first voltage bias induces the RRAM cell to change from a low resistance to an intermediate resistance. The intermediate resistance is greater than the low resistance. A second voltage bias is then applied to the RRAM cell. The second voltage bias has a second polarity that is opposite to the first polarity. The application of the second voltage bias induces the RRAM cell to have a high resistance. The high resistance is greater than the intermediate resistance.
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公开(公告)号：US20200372955A1
公开(公告)日：2020-11-26
申请号：US16417705
申请日：2019-05-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chao-Yang Chen , Cheng-Jun Wu , Chun-Yang Tsai , Kuo-Ching Huang
IPC: G11C13/00
Abstract: In some embodiments, the present disclosure relates to a method of operation a resistive random access memory (RRAM) cell, comprising the performing of a reset operation to the RRAM cell. A first voltage bias is applied to the RRAM cell. The first voltage bias has a first polarity. The application of the first voltage bias induces the RRAM cell to change from a low resistance to an intermediate resistance. The intermediate resistance is greater than the low resistance. A second voltage bias is then applied to the RRAM cell. The second voltage bias has a second polarity that is opposite to the first polarity. The application of the second voltage bias induces the RRAM cell to have a high resistance. The high resistance is greater than the intermediate resistance.
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