公开(公告)号：US10961118B2

公开(公告)日：2021-03-30

申请号：US16584752

申请日：2019-09-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Chia Lee ,  Chin-Min Lin ,  Cheng San Chou ,  Hsiang-Fu Chen ,  Wen-Chuan Tai ,  Ching-Kai Shen ,  Hua-Shu Ivan Wu ,  Fan Hu

IPC: B81C1/00 ,  B81B7/02

Abstract: The present disclosure relates to a micro-electro mechanical system (MEMS) package and a method of achieving differential pressure adjustment in multiple MEMS cavities at a wafer-to-wafer bonding level. In some embodiments, a ventilation trench and an isolation trench are concurrently within a capping substrate. The isolation trench isolates a silicon region and has a height substantially equal to a height of the ventilation trench. A sealing structure is formed within the ventilation trench and the isolation trench, the sealing structure filing the isolation trench and defining a vent within the ventilation trench. A device substrate is provided and bonded to the capping substrate at a first gas pressure and hermetically sealing a first cavity associated with a first MEMS device and a second cavity associated with a second MEMS device. The capping substrate is thinned to open the vent to adjust a gas pressure of the second cavity.

公开(公告)号：US20190161346A1

公开(公告)日：2019-05-30

申请号：US15823969

申请日：2017-11-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Chia Lee ,  Chin-Min Lin ,  Cheng San Chou ,  Hsiang-Fu Chen ,  Wen-Chuan Tai ,  Ching-Kai Shen ,  Hua-Shu Ivan Wu ,  Fan Hu

IPC: B81C1/00 ,  B81B7/02

Abstract: The present disclosure relates to a micro-electro mechanical system (MEMS) package and a method of achieving differential pressure adjustment in multiple MEMS cavities at a wafer-to-wafer bonding level. A device substrate comprising first and second MEMS devices is bonded to a capping substrate comprising first and second recessed regions. A ventilation trench is laterally spaced apart from the recessed regions and within the second cavity. A sealing structure is arranged within the ventilation trench and defines a vent in fluid communication with the second cavity. A cap is arranged within the vent to seal the second cavity at a second gas pressure that is different than a first gas pressure of the first cavity.

公开(公告)号：US10025442B2

公开(公告)日：2018-07-17

申请号：US15370191

申请日：2016-12-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng San Chou

IPC: G06F3/00 ,  G06F3/044

Abstract: The present disclosure relates to a capacitive fingerprint sensor having an air gap, which is disposed under a sensing electrode and that is configured to improve sensing sensitivity by reducing a parasitic capacitance of the capacitive fingerprint sensor, and an associated method. In some embodiments, the capacitive fingerprint sensor includes a plurality of semiconductor devices disposed over a substrate. An interconnect structure is disposed over the semiconductor devices. A sensing electrode is disposed over the interconnect structure to form a capacitance between the sensing electrode and finger skins. An air gap is disposed under the sensing electrode and enclosed by the sensing electrode and the interconnect structure.

公开(公告)号：US20170336890A1

公开(公告)日：2017-11-23

申请号：US15370191

申请日：2016-12-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng San Chou

IPC: G06F3/044

CPC classification number: G06F3/044 ,  G06F2203/04103 ,  G06K9/00006 ,  G06K9/0002

Abstract: The present disclosure relates to a capacitive fingerprint sensor having an air gap, which is disposed under a sensing electrode and that is configured to improve sensing sensitivity by reducing a parasitic capacitance of the capacitive fingerprint sensor, and an associated method. In some embodiments, the capacitive fingerprint sensor includes a plurality of semiconductor devices disposed over a substrate. An interconnect structure is disposed over the semiconductor devices. A sensing electrode is disposed over the interconnect structure to form a capacitance between the sensing electrode and finger skins. An air gap is disposed under the sensing electrode and enclosed by the sensing electrode and the interconnect structure.