公开(公告)号：US20190221405A1

公开(公告)日：2019-07-18

申请号：US16368060

申请日：2019-03-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMAWAKU ,  Chishio KOSHIMIZU ,  Tatsuo MATSUDO

IPC: H01J37/32

CPC classification number: H01J37/32577 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165 ,  H01J37/32541 ,  H01J37/32568

Abstract: Disclosed is a plasma processing apparatus including a processing chamber configured to perform a processing on a wafer by plasma, a VF power supply configured to change a frequency of a high frequency power to be supplied into the chamber, a susceptor configured to mount the wafer thereon, and a focus ring disposed to surround the wafer. A first route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the wafer and the plasma, and a second route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the focus ring and the plasma. The reflection minimum frequency of the first route is different from the reflection minimum frequency of the second route, and the frequency range changeable by the VF power supply includes the reflection minimum frequencies of the first and second routes.

公开(公告)号：US20180308662A1

公开(公告)日：2018-10-25

申请号：US16002196

申请日：2018-06-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA ,  Masashi SAITO ,  Kazuki DENPOH ,  Chishio KOSHIMIZU ,  Jun YAMAWAKU

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831 ,  H05H1/46

Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.

公开(公告)号：US20140124139A1

公开(公告)日：2014-05-08

申请号：US14070190

申请日：2013-11-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira KOSHIISHI ,  Masaru SUGIMOTO ,  Kunihiko HINATA ,  Noriyuki KOBAYASHI ,  Chishio KOSHIMIZU ,  Ryuji OHTANI ,  Kazuo KIBI ,  Masashi SAITO ,  Naoki MATSUMOTO ,  Yoshinobu OHYA ,  Manabu IWATA ,  Daisuke YANO ,  Yohei YAMAZAWA ,  Hidetoshi HANAOKA ,  Toshihiro HAYAMI ,  Hiroki YAMAZAKI ,  Manabu SATO

IPC: H01J37/32

CPC classification number: H01J37/32422 ,  H01J37/32018 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32834 ,  H01J2237/2001 ,  H01J2237/334 ,  H01J2237/3344 ,  H01L21/67069 ,  Y10S156/915

Abstract: A plasma processing apparatus includes a first and second electrodes disposed on upper and lower sides and opposite each other within a process container, a first RF power application unit and a DC power supply both connected to the first electrode, and second and third radio frequency power application units both connected to the second electrode. A conductive member is disposed within the process container and grounded to release through plasma a current caused by a DC voltage applied from the DC power supply. The conductive member is supported by a first shield part around the second electrode and laterally protruding therefrom at a position between the mount face of the second electrode and an exhaust plate for the conductive member to be exposed to the plasma. The conductive member is grounded through a conductive internal body of the first shield part.

Abstract translation: 一种等离子体处理装置，包括在处理容器内设置在上侧和下侧并彼此相对的第一和第二电极，连接到第一电极的第一RF电力施加单元和DC电源，以及第二和第三射频功率 应用单元都连接到第二电极。 导电构件设置在处理容器内并接地以通过等离子体释放由直流电源施加的直流电压引起的电流。 导电构件由第二电极周围的第一屏蔽部分支撑，并且在第二电极的安装面和用于导电构件的排气板之间的位置处侧向突出以暴露于等离子体。 导电构件通过第一屏蔽部分的导电内部主体接地。

公开(公告)号：US20250132129A1

公开(公告)日：2025-04-24

申请号：US19000700

申请日：2024-12-24

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: A disclosed plasma processing apparatus includes a chamber, a radio frequency power supply, and circuitry. The radio frequency power supply is configured to supply a source radio frequency power to generate a plasma from a gas in the chamber. The circuitry is configured to set a source frequency of the source radio frequency power when the source radio frequency power is supplied alone to suppress a degree of reflection of the source radio frequency power in accordance with the source frequency and the degree of reflection of the source radio frequency power when the source radio frequency power is supplied alone beforehand.

公开(公告)号：US20240395509A1

公开(公告)日：2024-11-28

申请号：US18792992

申请日：2024-08-02

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: In an apparatus for plasma processing according to an exemplary embodiment, a radio frequency power source generates radio frequency power which is supplied for generation of a plasma. A bias power source supplies bias power to a lower electrode of a substrate support. The bias power varies a potential of a substrate within a cycle thereof. The radio frequency power is supplied in at least a part of a first period in the cycle, in which the potential of the substrate is relatively high. A power level of the radio frequency power is lowered in a second period in the cycle, in which the potential of the substrate is relatively low. In the first period and the second period, the sheath adjuster adjusts a position in a vertical direction of an upper end of a sheath above an edge ring.

公开(公告)号：US20230078135A1

公开(公告)日：2023-03-16

申请号：US17945353

申请日：2022-09-15

Applicant: Tokyo Electron Limited

Inventor： Natsumi TORII ,  Koichi NAGAMI ,  Chishio KOSHIMIZU ,  Jun ABE

IPC: H01J37/32

Abstract: There is provided a plasma processing apparatus for performing plasma processing or a substrate, comprising: a chamber; a substrate support disposed in the chamber and including a base, an electrostatic chuck on the base, and an edge ring disposed to surround a substrate mounted on the electrostatic chuck; a Radio Frequency (RF) power supply for supplying RF power for generating plasma from gases in the chamber; a DC power supply for applying a negative DC voltage to the edge ring; a waveform control element for controlling a waveform of the DC voltage; and a controller for controlling a time taken for the DC voltage to reach a desired value by adjusting a constant of the waveform control element.

公开(公告)号：US20220406566A1

公开(公告)日：2022-12-22

申请号：US17844721

申请日：2022-06-21

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: A plasma processing apparatus disclosed herein includes a substrate support provided in a chamber; a radio-frequency power supply configured to supply radio-frequency power to generate plasma in the chamber; and a bias power supply configured to supply electric bias energy to an electrode to draw ions into a substrate on the substrate support. The electric bias energy has a cycle having a time length reciprocal to a bias frequency. The radio-frequency power supply is further configured to adjust an output power level of the radio-frequency power in a plurality of phase periods in the cycle such that an evaluation value is less than or equal to a first value, the evaluation value being a power level of reflected waves of the radio-frequency power or a value of a ratio of the power level to the output power level.

公开(公告)号：US20220216036A1

公开(公告)日：2022-07-07

申请号：US17700496

申请日：2022-03-22

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Taichi HIRANO ,  Toru HAYASAKA ,  Shinji KUBOTA ,  Koji MARUYAMA ,  Takashi DOKAN

IPC: H01J37/32 ,  H01L21/3065

Abstract: A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.

公开(公告)号：US20220159820A1

公开(公告)日：2022-05-19

申请号：US17592509

申请日：2022-02-04

Applicant: Tokyo Electron Limited

Inventor： Takashi DOKAN ,  Shinji KUBOTA ,  Chishio KOSHIMIZU

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311

Abstract: A plasma processing method includes performing a first plasma processing in a processing chamber in a first period, and performing a second plasma processing in the processing chamber during a second period continuously after the first period. In the first period and the second period, a first radio-frequency power for bias is continuously supplied to a lower electrode. A second radio-frequency power for plasma generation may be supplied as a pulsed radio-frequency power in a first partial period in each cycle of the first radio-frequency power in the first period. The second radio-frequency power may be supplied as a pulsed radio-frequency power in a second partial period in each cycle of the first radio-frequency power in the second period.

公开(公告)号：US20220130646A1

公开(公告)日：2022-04-28

申请号：US17501889

申请日：2021-10-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a chamber; a first lower electrode provided inside the chamber and having a substrate placement region on which a substrate is placed; a second lower electrode disposed in a region outside the substrate placement region; a first upper electrode disposed to face the substrate placement region; a second upper electrode disposed in a region outside the first upper electrode to face the second lower electrode; and a first power supply configured to supply a first periodic signal to the first lower electrode, wherein at least one of the second lower electrode and the second upper electrode includes a recess, and the second lower electrode or the second upper electrode is located on a normal line with respect to a surface of the recess.