公开(公告)号：US11929314B2

公开(公告)日：2024-03-12

申请号：US17200024

申请日：2021-03-12

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Hsien Huang ,  Peng-Fu Hsu ,  Yu-Syuan Cai ,  Min-Hsiu Hung ,  Chen-Yuan Kao ,  Ken-Yu Chang ,  Chun-I Tsai ,  Chia-Han Lai ,  Chih-Wei Chang ,  Ming-Hsing Tsai

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/00

CPC classification number: H01L23/49822 ,  H01L21/4828 ,  H01L23/49838 ,  H01L24/29 ,  H01L2224/29184

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.