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公开(公告)号：US09735192B2
公开(公告)日：2017-08-15
申请号：US15161805
申请日：2016-05-23
Applicant: Sony Corporation
Inventor： Itaru Oshiyama , Takashi Ando , Susumu Hiyama , Tetsuji Yamaguchi , Yuko Ohgishi , Harumi Ikeda
IPC: H01L27/146 , H01L27/148
CPC classification number: H01L27/14636 , H01L27/1461 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/14683 , H01L27/14818 , H01L27/14868
Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.
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12.发明授权公开(公告)号：US09673235B2
公开(公告)日：2017-06-06
申请号：US15084287
申请日：2016-03-29
Applicant: SONY CORPORATION
Inventor： Takeshi Yanagita , Itaru Oshiyama , Takayuki Enomoto , Harumi Ikeda , Shinichiro Izawa , Atsuhiko Yamamoto , Kazunobu Ota
IPC: H01L27/146
CPC classification number: H01L27/146 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14645 , H01L27/14685 , H01L27/14689
Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate 12 and multiple photoelectric converters 40 that are formed on the substrate 12, an insulating film 21 forms an embedded element separating unit 19. The element separating unit 19 is configured of an insulating film 20 having a fixed charge that is formed so as to coat the inner wall face of a groove portion 30, within the groove portion 30 which is formed in the depth direction from the light input side of the substrate 12.
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13.发明申请SOLID STATE IMAGING DEVICE FOR REDUCING DARK CURRENT, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS 审中-公开用于减少深电流的固态成像装置，其制造方法和成像装置公开(公告)号：US20160276401A1
公开(公告)日：2016-09-22
申请号：US15161805
申请日：2016-05-23
Applicant: Sony Corporation
Inventor： Itaru Oshiyama , Takashi Ando , Susumu Hiyama , Tetsuji Yamaguchi , Yuko Ohgishi , Harumi Ikeda
IPC: H01L27/148
CPC classification number: H01L27/14636 , H01L27/1461 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/14683 , H01L27/14818 , H01L27/14868
Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.
Abstract translation: 具有执行入射光的光电转换的光感测部的固态成像装置包括：形成在感光部的受光面上的绝缘层; 在绝缘层上形成具有负电荷的层; 以及形成在光检测部的光接收表面上的空穴积聚层。
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公开(公告)号：US11094728B2
公开(公告)日：2021-08-17
申请号：US16391040
申请日：2019-04-22
Applicant: SONY CORPORATION
Inventor： Satoe Miyata , Itaru Oshiyama
IPC: H01L27/146
Abstract: The present technology relates to an image pickup device and an electronic apparatus that are configured to enhance characteristics. A solid-state image pickup device includes a photoelectric conversion section that is arranged on a semiconductor substrate and configured to photoelectrically convert an incident light, a moth-eye section that includes recesses and projections formed on a surface on a light incident side in the semiconductor substrate and has, when a cross section approximately parallel to a direction toward the photoelectric conversion section from the light incident side is viewed, a recessed portion protruding toward the side of the photoelectric conversion section, the recessed portion having a curvature or a polygonal shape, and a region that is arranged adjacent to and opposite to the photoelectric conversion section of the moth-eye section and has a refractive index different from a refractive index of the semiconductor substrate.
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公开(公告)号：US10770500B2
公开(公告)日：2020-09-08
申请号：US16230197
申请日：2018-12-21
Applicant: Sony Corporation
Inventor： Itaru Oshiyama , Takashi Ando , Susumu Hiyama , Tetsuji Yamaguchi , Yuko Ohgishi , Harumi Ikeda
IPC: H01L27/146 , H01L27/148
Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.
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Patent Agency Ranking
公开(公告)号：US10727261B2
公开(公告)日：2020-07-28
申请号：US16069304
申请日：2017-01-06
Applicant: SONY CORPORATION
Inventor： Satoe Miyata , Itaru Oshiyama
IPC: H01L27/146
Abstract: The present technology relates to an image pickup device and an electronic apparatus that are configured to enhance characteristics. A solid-state image pickup device includes a photoelectric conversion section that is arranged on a semiconductor substrate and configured to photoelectrically convert an incident light, a moth-eye section that includes recesses and projections formed on a surface on a light incident side in the semiconductor substrate and has, when a cross section approximately parallel to a direction toward the photoelectric conversion section from the light incident side is viewed, a recessed portion protruding toward the side of the photoelectric conversion section, the recessed portion having a curvature or a polygonal shape, and a region that is arranged adjacent to and opposite to the photoelectric conversion section of the moth-eye section and has a refractive index different from a refractive index of the semiconductor substrate.
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17.发明授权公开(公告)号：US10418404B2
公开(公告)日：2019-09-17
申请号：US16130666
申请日：2018-09-13
Applicant: SONY CORPORATION
Inventor： Takeshi Yanagita , Itaru Oshiyama , Takayuki Enomoto , Harumi Ikeda , Shinichiro Izawa , Atsuhiko Yamamoto , Kazunobu Ota
IPC: H01L27/146
Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.
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18.发明申请公开(公告)号：US20190148444A1
公开(公告)日：2019-05-16
申请号：US16230197
申请日：2018-12-21
Applicant: Sony Corporation
Inventor： Itaru Oshiyama , Takashi Ando , Susumu Hiyama , Tetsuji Yamaguchi , Yuko Ohgishi , Harumi Ikeda
IPC: H01L27/146 , H01L27/148
Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.
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19.发明申请公开(公告)号：US20180204869A1
公开(公告)日：2018-07-19
申请号：US15667556
申请日：2017-08-02
Applicant: Sony Corporation
Inventor： Itaru Oshiyama , Takashi Ando , Susumu Hiyama , Tetsuji Yamaguchi , Yuko Ohgishi , Harumi Ikeda
IPC: H01L27/146 , H01L27/148
CPC classification number: H01L27/14636 , H01L27/1461 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/14683 , H01L27/14818 , H01L27/14868
Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.
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20.发明授权Solid state imaging device for reducing dark current, method of manufacturing the same, and imaging apparatus 有权用于降低暗电流的固态成像装置，其制造方法和成像装置公开(公告)号：US09368536B2
公开(公告)日：2016-06-14
申请号：US14570784
申请日：2014-12-15
Applicant: Sony Corporation
Inventor： Itaru Oshiyama , Takashi Ando , Susumu Hiyama , Tetsuji Yamaguchi , Yuko Ohgishi , Harumi Ikeda
IPC: H01L27/146
CPC classification number: H01L27/14636 , H01L27/1461 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/14683 , H01L27/14818 , H01L27/14868
Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.
Abstract translation: 具有执行入射光的光电转换的光感测部的固态成像装置包括：形成在感光部的受光面上的绝缘层; 在绝缘层上形成具有负电荷的层; 以及形成在光检测部的光接收表面上的空穴积聚层。
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