公开(公告)号：US5409889A

公开(公告)日：1995-04-25

申请号：US61762

申请日：1993-05-03

Applicant: Satyendranath Das

Inventor： Satyendranath Das

IPC: H01P1/18 ,  H01B12/02 ,  H01P9/00 ,  H03H11/16

CPC classification number: H01P1/181 ,  Y10S505/70 ,  Y10S505/701 ,  Y10S505/866

Abstract: The Ferroelectric high Tc superconductor RF Phase Shifter contains a ferroelectric medium and a film of a single crystal high Tc superconductor is used as the conductors. Between the ferroelectric medium and the input, there is a quarter-wave, dielectric or ferroelectric or the same material as used for the phase shifter, matching transformer. Between the ferroelectric medium and the output, there is a quarter-wave, dielectric, ferroelectric or the same material as used for the phase shifter, matching transformer. A bias field is connected across the top and bottom surfaces of the active ferroelectric medium. When a bias field is applied across the surfaces of the ferroelectric medium, the permittivity is reduced and as such the velocity of propagation is increased. This causes an increase in the effective electrical length of the phase shifter or a phase difference or time delay. Increasing the bias voltage increases the phase shift. The ferroelectric high temperature superconductor RF phase shifter may be embedded as a part of the monolithic integrated circuit. The ferroelectric high Tc superconductor RF phase shifter may be constructed of thin film and ferroelectric liquid crystal. The ferroelectric material is operated above its Curie temperature.

Abstract translation: 铁电高Tc超导体RF移相器包含铁电介质，并且使用单晶高Tc超导体的膜作为导体。 在铁电介质和输入之间，有一个四分之一波，介质或铁电或与移相器，匹配变压器相同的材料。 在铁电介质和输出之间，有一个四分之一波长，电介质，铁电或与移相器，匹配变压器相同的材料。 偏置场连接在有源铁电介质的顶表面和底表面之间。 当跨越铁电介质的表面施加偏置场时，介电常数降低，传播速度增加。 这导致移相器的有效电长度的增加或相位差或时间延迟。 增加偏置电压会增加相移。 铁电高温超导体RF移相器可以嵌入作为单片集成电路的一部分。 铁电高Tc超导体RF移相器可以由薄膜和铁电液晶构成。 铁电材料的运行高于居里温度。

公开(公告)号：US5329261A

公开(公告)日：1994-07-12

申请号：US70738

申请日：1993-05-27

Applicant: Satyendranath Das

Inventor： Satyendranath Das

IPC: H03G11/00 ,  H01P1/22

CPC classification number: H03G11/006 ,  Y10S505/70 ,  Y10S505/703 ,  Y10S505/866

Abstract: The ferroelectric limiter utilizes the bias voltage dependent dielectric constant property of a ferroelectric material. A main transmission line having a length of two or more half wavelengths at the operating frequency is used. A branch line is connected at one half wavelength away from one end of the transmission line. The branch line presents a very high impedance on the main transmission line at a low level of signal. The branch line contains a ferroelectric material. As the signal level increases, the dielectric constant of the ferroelectric material in the branch line changes. This reduces the impedance presented by the branch line on the main transmission line reducing the impedance of the main transmission line and the resulting output of the limiter. As the signal level increases, the impedance presented by the branch line on the main transmission line becomes increasingly smaller, further reducing the output of the of the limiter. Two designs of the limiter are presented. The limiter can be a part of a monolithic microwave integrated circuit (MMIC). The conductive coatings of the limiter can be a film of a single crystal high Tc superconductor material. The upper frequency limit of the ferroelectric limiter is determined by the relaxation frequency of the ferroelectric material such as 95 GHz for Strontium Titanate.

Abstract translation: 铁电限制器利用铁电材料的偏置电压依赖介电常数特性。 使用在工作频率下具有两个或更多个半波长长度的主传输线。 分支线连接在远离传输线一端的一个半波长处。 分支线在低电平信号下在主传输线上呈现非常高的阻抗。 支线包含铁电材料。 随着信号电平的增加，分支线路中铁电材料的介电常数发生变化。 这降低了主传输线上的分支线所呈现的阻抗，从而降低了主传输线路的阻抗和限幅器的输出。 随着信号电平的增加，主传输线上的分支线呈现的阻抗变得越来越小，进一步降低了限幅器的输出。 提出了两种限制器设计。 限幅器可以是单片微波集成电路（MMIC）的一部分。 限制器的导电涂层可以是单晶高Tc超导体材料的膜。 铁电限制器的上限频率由铁电体材料的弛豫频率确定，例如95％的钛酸锶。

公开(公告)号：US5963165A

公开(公告)日：1999-10-05

申请号：US998747

申请日：1997-12-29

Applicant: Satyendranath Das

Inventor： Satyendranath Das

IPC: H04B7/204 ,  H04B7/185

CPC classification number: H04B7/2041

Abstract: A design of equally loaded, under varying traffic load conditions, high efficiency power amplifiers for a multibeam communication system is presented. Output beam contains signals of only one beam corresponding to its input beam. Signals arriving at the feed elements for an input beam "b", of the 1 to N beams, corresponding to an input beam "b", arrive in phase and add together, while signals arriving at said feed elements for the output beam "b" corresponding to the remaining input beams arrive in antiphase and cancel one another by appropriate selection of two set of fixed input and output phase shifters. The output beams are shaped to produce a small reduction of power at the crossover point of adjacent beams. MMIC and high Tc superconducting designs, including the design of high Tc superconducting reflector antenna, are presented.

Abstract translation: 提出了一种同样负载的，在变化的交通负载条件下的设计，用于多波束通信系统的高效率功率放大器。 输出光束包含对应于其输入光束的一个光束的信号。 对应于输入光束“b”的到达1到N个光束的输入光束“b”的信号到达相位并加在一起，而到达输出光束“b”的所述馈送元件的信号 “对应于剩余的输入光束通过适当选择两组固定输入和输出移相器反相抵消并彼此抵消。 输出光束被成形为在相邻光束的交叉点处产生小的功率减小。 提出了MMIC和高Tc超导设计，包括高Tc超导反射器天线的设计。

公开(公告)号：US5908811A

公开(公告)日：1999-06-01

申请号：US810253

申请日：1997-03-03

Applicant: Satyendranath Das

Inventor： Satyendranath Das

IPC: H01P1/203

CPC classification number: H01P1/2039 ,  H01P1/20336 ,  Y10S505/70 ,  Y10S505/701 ,  Y10S505/866

Abstract: This invention pertains to monolithic filters of the band-pass or band-reject type which a single crystal ferroelectric material having an electric field dependent permittivity. The filters are comprised of: a first layer of a single crystal dielectric material; a second layer of a single crystal high T.sub.c superconductor material; a third layer of a single crystal ferroelectric material; and a fourth layer of high T.sub.c superconductive microstrip lines configured into the various filter circuits, including resonator circuits and transformer circuits. The filters are capable of operating at power levels up to 0.5 MW at a temperature slightly above the Curie temperature to avoid hysteresis.

Abstract translation: 本发明涉及具有电场相关介电常数的单晶铁电材料的带通或带阻型的单片滤波器。 滤波器包括：单晶介质材料的第一层; 第二层单晶高Tc超导体材料; 第三层单晶铁电材料; 以及配置到各种滤波器电路中的第四层高Tc超导微带线，包括谐振器电路和变压器电路。 过滤器能够在略高于居里温度的温度下以高达0.5 MW的功率运行，以避免滞后。

公开(公告)号：US5679624A

公开(公告)日：1997-10-21

申请号：US571223

申请日：1995-12-12

Applicant: Satyendranath Das

Inventor： Satyendranath Das

IPC: H01P9/00 ,  H01B12/02

CPC classification number: H01P9/00 ,  Y10S505/70 ,  Y10S505/701 ,  Y10S505/866

Abstract: A number of MMIC ferroelectric variable time delay devices are presented. Each embodiment has a microstrip configuration deposited on a ferroelectric film which is deposited on a high Tc superconductor substrate connected to the ground. A bias electric field changes the permittivity of the ferroelectric material. As a result, a variable time delay is obtained.

Abstract translation: 提出了一些MMIC铁电可变时间延迟器件。 每个实施例具有沉积在铁电膜上的微带结构，其沉积在连接到地的高Tc超导体基板上。 偏置电场改变铁电材料的介电常数。 结果，获得可变时间延迟。

公开(公告)号：US5550550A

公开(公告)日：1996-08-27

申请号：US511532

申请日：1995-08-04

Applicant: Satyendranath Das

Inventor： Satyendranath Das

IPC: H04B7/204 ,  H04B7/185

CPC classification number: H04B7/2041

Abstract: A design of equally loaded, under varying traffic load conditions, power amplifiers for a multibeam satellite is presented. Each output beam contains signals of only one beam corresponding to its input beam. The output beams are shaped to produce a small reduction of power at the crossover point of adjacent beams. MMIC and high Tc superconducting designs, including the design of high Tc superconducting reflector antenna, are presented.

Abstract translation: 提出了一种同样负载的，在变化的交通负荷条件下的多波束卫星的功率放大器的设计。 每个输出光束包含仅对应于其输入光束的一个光束的信号。 输出光束被成形为在相邻光束的交叉点处产生小的功率减小。 提出了MMIC和高Tc超导设计，包括高Tc超导反射器天线的设计。

公开(公告)号：US5459123A

公开(公告)日：1995-10-17

申请号：US225320

申请日：1994-04-08

Applicant: Satyendranath Das

Inventor： Satyendranath Das

IPC: H01P1/217 ,  H01P1/207 ,  H01B12/02 ,  H01P1/208

CPC classification number: H01P1/217 ,  Y10S505/70 ,  Y10S505/866

Abstract: A cylindrical cavity is loaded with a ferroelectric rod and is resonant at the dominant mode. The loaded cylidrical cavity is a band pass filter. As a bias voltage is applied across the ferroelectric rod, its permittivity changes resulting in a new resonant frequency for the loaded cylindrical cavity. The ferroelectric rod is operated at a temperature slightly above its Curie temperature. The loaded cylindrical cavity is kept at a constant designed temperature. The cylindrical cavity is made of conductors, a single crystal high Tc superconductor including YBCO and a single crystal dielectric, including sapphire and lanthanum aluminate, the interior conducting surfaces of which are deposited with a film of a single crystal high Tc superconductor. Embodiments also include waveguide single and multiple cavity type tunable filters. Embodiments also include tunable band reject filters.

Abstract translation: 圆柱形腔装有铁电杆，并以主模式共振。 加载的圆形腔是带通滤波器。 当偏置电压施加在铁电棒上时，其电容率变化导致负载的圆柱形腔的新的谐振频率。 铁电棒的操作温度略高于其居里温度。 负载的圆柱形腔保持在恒定的设计温度。 圆柱形空腔由导体制成，包括YBCO和单晶电介质的单晶高Tc超导体，包括蓝宝石和铝酸镧，其内部导电表面沉积有单晶高Tc超导体的膜。 实施例还包括波导单腔和多腔型可调滤波器。 实施例还包括可调波段滤波器。

公开(公告)号：US5407904A

公开(公告)日：1995-04-18

申请号：US105620

申请日：1993-08-13

Applicant: Satyendranath Das

Inventor： Satyendranath Das

IPC: H01P1/208 ,  H01P1/209 ,  H01B12/02

CPC classification number: H01P1/208 ,  H01P1/209 ,  Y10S505/70 ,  Y10S505/866

Abstract: To reduce the losses, high Tc superconductive waveguide filters are disclosed. There are two approaches to make the filters. In the first approach, all waveguide sections, irises, flanges are made of a single crystal high Tc superconductor. The single crystal is machined to the desired shape and size, the pieces are brazed and connected with flanges. In the second approach all waveguide sections, irises and flanges are made of a single crystal dielectric material the conducting surfaces of which are deposited with a film of a single crystal high Tc superconductor. The waveguide sections, irises and flanges are connected together by brazing or by a similar method. There are two basic types, (1) band pass and (2) band reject, of filters. In the band pass type, a series of resonators are placed one after another with a separation, typically, of three quarters of a wavelength between the centers of adjacent resonators. In the band reject filters, the resonators are in branch lines, i.e., on the broad wall of the main waveguide with a separation, typically, of three quarters of a wavelength between the centers of adjacent resonators.

Abstract translation: 为了减少损耗，公开了高Tc超导波导滤波器。 有两种方法来制作过滤器。 在第一种方法中，所有波导部分，虹膜法兰由单晶高Tc超导体制成。 单晶被加工成所需的形状和尺寸，这些片被钎焊并与法兰连接。 在第二种方法中，所有波导部分，虹膜和凸缘由单晶介质材料制成，其导电表面沉积有单晶高Tc超导体的膜。 波导部分，虹膜和凸缘通过钎焊或类似的方法连接在一起。 滤波器有两种基本类型：（1）带通和（2）带阻; 在带通型中，一系列谐振器一个接一个地放置，相邻谐振器的中心之间的隔离通常为四分之三波长。 在带阻滤波器中，谐振器处于分支线路，即在主波导的宽壁上，在相邻谐振器的中心之间具有通常为四分之三波长的间隔。

公开(公告)号：US5304960A

公开(公告)日：1994-04-19

申请号：US41205

申请日：1993-04-01

Applicant: Satyendranath Das

Inventor： Satyendranath Das

IPC: H01P1/10

CPC classification number: H01P1/10 ,  Y10S505/866

Abstract: An electronically controlled ferroelectric RF switch is an active medium formed from a ferroelectric material the permittivity, and as such the refractive index, of which may be varied by varying the strength of an electric field in which it is immersed. The ferroelectric RF switch includes the ferroelectric material having electrodes or conductors mounted thereon that are connected to an adjustable d.c. or a.c. voltage source. The switch may be placed in an RF transmission line that includes appropriate input and output impedance matching devices such as quarterwave transformers. The active medium of the RF switch is constructed of two prismatic structures of a ferroelectric material. When the two prisms are at the same zero bias voltage, then the RF energy passing through the switch is not deflected and the switch is in the OFF condition. Application of a bias voltage reduces the permittivity and the refractive index of the outer prismatic structure. The RF energy is refracted away from the normal at the interface between the prismatic surfaces. When the magnitude of the bias voltage is sufficiently high and the permittivity and the refractive index of the outer prismatic structure are sufficiently reduced, total internal reflection of the RF energy takes place at the boundary of the two prismatic surfaces and the switch is switched ON, and the RF energy appears on another port. The ferroelectric RF switch may be embedded as part of a microwave integrated circuit. The ferroelectric RF switch may be constructed of thin ferroelectric film. The copper losses may be reduced by using a high Tc superconductor material as the conducting surface. The ferroelectric material is operated in the paraelectric phase slightly above its Curie temperature. The switch is reciprocal between the conductive ports.

Abstract translation: 电子控制铁电RF开关是由铁电材料形成的介电常数，并且因此折射率可以通过改变浸入其中的电场的强度来改变。 铁电RF开关包括具有安装在其上的电极或导体的铁电材料，其连接到可调节的直流电。 或a.c. 电压源。 开关可以放置在包括适当的输入和输出阻抗匹配装置（例如四分之一波长变压器）的RF传输线中。 RF开关的有源介质由铁电材料的两个棱柱结构构成。 当两个棱镜处于相同的零偏置电压时，通过开关的RF能量不会偏转，开关处于OFF状态。 偏置电压的应用降低了外部棱柱结构的介电常数和折射率。 RF能量在棱镜表面之间的界面处折射离法线。 当偏置电压的大小足够高并且外棱镜结构的介电常数和折射率被充分降低时，RF能量的全内反射发生在两个棱镜表面的边界处，并且开关被接通， 并且RF能量出现在另一个端口上。 铁电RF开关可以嵌入作为微波集成电路的一部分。 铁电RF开关可以由薄铁电体膜构成。 通过使用高Tc超导体材料作为导电表面可以减少铜损耗。 铁电材料在略高于其居里温度的顺电阶段运行。 开关在导电端口之间是倒数的。

公开(公告)号：US6029075A

公开(公告)日：2000-02-22

申请号：US840883

申请日：1997-04-17

Applicant: Satyendranath Das

Inventor： Satyendranath Das

IPC: H01P1/18 ,  H01P7/00 ,  H01B12/02

CPC classification number: H01P1/181 ,  H01P7/00 ,  Y10S505/70 ,  Y10S505/701 ,  Y10S505/866

Abstract: A coplanar waveguide is formed by a spiral with two arms. One arm is labelled 1, and the second arm is labelled 2. The arms labelled 1 and 2 are separated by equal distance. The spiral arms labelled 1 and 2 are formed by the deposition of a film of a conductor, a third layer, on a film 14 of a single crystal ferroelectric material, a second layer, which is deposited on a single crystal dielectric material, a first layer 1. Input is 10 and the output is 11. The CPW spiral arms labelled 1 and 2 forms a time delay device. When a bias voltage V is applied between the two spiral arms labelled 1 and 2 through a bias filter made of an inductor L and a capacitor C, the permittivity of the ferroelectric film between the two spiral arms labelled 1 and 2, or across the CPW, producing a change in the time delay. By the application of different levels of bias voltage between the two spiral arms labelled 1 and 2, different permittivity of the ferroelectric material are obtained and thus different changes in the time delay are obtained. Thus a variable time delay is obtained. Other delay embodiments are (1) meander line, (2) square shaped structure, (3) interdigital line, (4) parallel CPW.

Abstract translation: 共面波导由具有两个臂的螺旋形成。 一只手臂被标记为1，第二只手臂被标记为2.标记为1和2的手臂被分开相等的距离。 标记为1和2的螺旋臂通过在单晶铁电材料的膜14上沉积导体第三层的膜，沉积在单晶介电材料上的第二层，第一层 输入为10，输出为11.标记为1和2的CPW螺旋臂形成时延装置。 当通过由电感器L和电容器C构成的偏置滤光器在标记为1和2的两个螺旋臂之间施加偏置电压V时，标记为1和2的两个螺旋臂之间或跨越CPW的铁电薄膜的介电常数 ，导致时间延迟的变化。 通过在标记为1和2的两个螺旋臂之间施加不同电平的偏置电压，获得铁电材料的不同介电常数，从而获得不同的时间延迟变化。 因此获得可变时间延迟。 其他延迟实施例是（1）曲折线，（2）方形结构，（3）叉指线，（4）并联CPW。