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11.发明授权Aluminum precursor, method of forming a thin film and method of forming a capacitor using the same 有权铝前体，形成薄膜的方法和使用该前体形成电容器的方法公开(公告)号：US09472345B2
公开(公告)日：2016-10-18
申请号：US14176173
申请日：2014-02-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-Chul Youn , Atsushi Sakurai , Masako Hatase , Youn-Joung Cho , Ji-Na Kang , Naoki Yamada , Jung-Sik Choi
CPC classification number: H01G4/33 , H01G4/085 , H01G4/1272 , H01L27/10852 , H01L28/40
Abstract: An aluminum compound is represented by following Formula 1. In Formula 1, X is a functional group represented by following Formula 2 or Formula 3.
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