公开(公告)号：US20140015025A1

公开(公告)日：2014-01-16

申请号：US13928087

申请日：2013-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungchak Ahn ,  Yitae Kim

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14641

Abstract: Image sensors are provided. In the image sensor, an area of a device isolation layer may be reduced and elements may be isolated from each other by a channel stop region extending between the photoelectric conversion region and the device isolation layer, such that a dark current property of the image sensor may be improved.

Abstract translation: 提供图像传感器。 在图像传感器中，可以减小器件隔离层的区域，并且可以通过在光电转换区域和器件隔离层之间延伸的沟道停止区域将元件彼此隔离，使得图像传感器的暗电流特性 可以改进。