公开(公告)号：US20200220018A1

公开(公告)日：2020-07-09

申请号：US16708717

申请日：2019-12-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Uk JANG ,  Young Dae CHO ,  Ki Hwan KIM ,  Su Jin JUNG

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/786 ,  H01L29/08

Abstract: A semiconductor device includes an active region extending in a first direction on a substrate, channel layers on the active region and spaced apart vertically, a gate structure intersecting the active region and the channel layers, the gate structure extending in a second direction and surrounding the channel layers, and a source/drain region on the active region at a side of the gate structure, the source/drain region contacting the channel layers, the source/drain region including first epitaxial layers having a first composition and including first layers on side surfaces of the channel layers and a second layer on the active region at a lower end of the source/drain region, and a second epitaxial layer having a second composition different from the first composition, the second epitaxial layer being between the first epitaxial layers in the first direction and being between the first epitaxial layers vertically in a third direction.

公开(公告)号：US20200220015A1

公开(公告)日：2020-07-09

申请号：US16598012

申请日：2019-10-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Uk JANG ,  Ki Hwan KIM ,  Su Jin JUNG ,  Bong Soo KIM ,  Young Dae CHO

IPC: H01L29/78 ,  H01L29/24 ,  H01L29/08 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

Abstract: A semiconductor device including an active region extending in a first direction on a substrate; a gate structure intersecting the active region and extending in a second direction on the substrate; and a source/drain region on the active region and at least one side of the gate structure, wherein the source/drain region includes a plurality of first epitaxial layers spaced apart from each other in the first direction, the plurality of first epitaxial layers including first impurities of a first conductivity type; and a second epitaxial layer filling a space between the plurality of first epitaxial layers, the second epitaxial layer including second impurities of the first conductivity type.