公开(公告)号：US20170288138A1

公开(公告)日：2017-10-05

申请号：US15358544

申请日：2016-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Woo Lee ,  Soon-Oh Park ,  Jeong-Hee Park ,  Hideki Horii

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1233 ,  H01L27/2409 ,  H01L27/2427 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/124 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1616 ,  H01L45/1675

Abstract: A variable resistance memory device includes a pattern of one or more first conductive lines, a pattern of one or more second conductive lines, and a memory structure between the first and second conductive lines. The pattern of first conductive lines extends in a first direction on a substrate, and the first conductive lines extend in a second direction crossing the first direction. The pattern of second conductive lines extends in the second direction on the first conductive lines, and the second conductive lines extend in the first direction. The memory structure vertically overlaps a first conductive line and a second conductive line. The memory structure includes an electrode structure, an insulation pattern on a central upper surface of the electrode structure, and a variable resistance pattern on an edge upper surface of the electrode structure. The variable resistance pattern at least partially covers a sidewall of the insulation pattern.