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11.发明授权公开(公告)号：US10824564B2
公开(公告)日：2020-11-03
申请号：US16007667
申请日：2018-06-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yu-hun Jun , Sil Wan Chang , Heechul Chae , Seontaek Kim , In Hwan Doh
IPC: G06F12/08 , G06F12/0811 , G06F3/06
Abstract: An operation method of a memory controller which is configured to control a nonvolatile memory device includes receiving a command from the outside, calculating a delay time based on a currently available write buffer, a previously available write buffer, and a reference value, and processing the command based on the delay time.
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